Method of producing an optoelectronic device and optoelectronic device

A method of producing an optoelectronic device comprising:

• A) providing a substrate,
• B) applying an anode to the substrate,
• C) applying a first organic layer stack to anode,
• D) producing a charge-generating layer stack on the first organic layer stack,
• E) applying a second organic layer stack to the charge-generating layer stack,
• F) applying a cathode to the second organic layer stack,
• wherein step D) comprises:
• D1) applying a solution of a first electron-conductive metal oxide precursor to the first organic layer stack, wherein the solution of the first metal oxide precursor and the first organic layer have the same temperature of 30° C. to 60° C. and the solution of the first metal oxide precursor and the first organic layer stack are heated, prior to step D1) to the same temperature of 30° C. to 60° C. and wherein the first electron-conductive metal oxide precursor has formula A or A′:
• where R1, R2, R3, R4, R5 and R6 can be selected to be the same or different and are selected from the group consisting of H and alkyl residues, M1=Zn or Sn and n=1 or 2,
• D2) generating a first charge-generating layer comprising a first metal oxide,
• D3) applying a solution of a second electron-conductive metal oxide precursor to the first charge-generating layer, wherein the solution of the second metal oxide precursor and the first charge-generating layer have a temperature of 30° C. to 60° C. and the solution of the second metal oxide precursor and the first charge-generating layer are heated, prior to step D3), to the same temperature of 30° C. to 60° C. and wherein the second electron-conductive metal oxide precursor has one of formulae B, C or D:
• where in formula B:
• R1′, R2′ and R3′ can be selected to be the same or different and are selected from the group consisting of methyl-, ethyl-, n-propyl, i-propyl, n-butyl-, i-butyl, sec-butyl and tert-butyl residues and
• M2=V, Nb or Ta,
• where in formula C:
• R1″, R2″, R3″, R4″ and R5″ can be selected to be the same or different and are selected from the group consisting of methyl-, ethyl-, n-propyl, i-propyl, n-butyl-, i-butyl, sec-butyl and tert-butyl residues and
• M3=W or Mo,
• and where in formula D:
• R′″, R2′″, R3′″, R4′″, R5′″ and R6′″ can be selected to be the same or different and are selected from the group consisting of methyl-, ethyl-, n-propyl, i-propyl, n-butyl-, i-butyl, sec-butyl and tert-butyl residues and
• M4=W or Mo,
• D4) generating a second charge-generating layer comprising a second metal oxide.