Quantum dot light emitting device and manufacturing method thereof, liquid crystal display device

A manufacturing method of a quantum dot light emitting device, wherein the manufacturing method of a quantum dot light emitting device comprises:

• providing a substrate;
• forming an anode on a surface of the substrate;
• coating a hole injection material on a surface of the anode away from the substrate to form a hole injection layer;
• coating a first hole transport material on a surface of the hole injection layer away from the anode to form a first hole transport layer;
• coating a first quantum dot light emitting material on a surface of the first hole transport layer away from the hole injection layer to form a first quantum dot light emitting layer;
• forming a charge generation layer on a surface of the first quantum dot light emitting layer away from the first hole transport layer, wherein the charge generation layer comprises a second electron transport layer, a carrier generation layer and a second hole transport layer, the second electron transport layer, the carrier generation layer and the second hole transport layer are sequentially stacked in that order, and the second electron transport layer is disposed on the surface of the first quantum dot light emitting layer away from the first hole transport layer;
• coating a second quantum dot light emitting material on a surface of the charge generation layer away from the first quantum dot light emitting layer to form a second quantum dot light emitting layer;
• coating a first electron transport material on a surface of the second quantum dot light emitting layer away from the charge generation layer to form a first electron transport layer;
• coating an electron injection material on a surface of the first electron transport layer away from the second quantum dot light emitting layer to form an electron injection layer;
• forming a cathode on a surface of the electron injection layer away from the first electron transport layer.

A liquid crystal display device, wherein the liquid crystal display device comprises a quantum dot light emitting device, the quantum dot light emitting device comprises an anode, a hole injection layer, a first hole transport layer, a first quantum dot light emitting layer, a charge generation layer, a second quantum dot light emitting layer, a first electron transport layer, an electron injection layer and a cathode;

• the anode and the cathode are disposed opposite to and spaced from each other;
• the hole injection layer, the first hole transport layer, the first quantum dot light emitting layer, the charge generation layer, the second quantum dot light emitting layer, the first electron transport layer and the electron injection layer are sequentially stacked between the anode and the cathode in that order, the hole injection layer is in contact with the anode, and the electron injection layer is in contact with the cathode;
• the charge generation layer comprises a second electron transport layer, a carrier generation layer and a second hole transport layer, the second electron transport layer, the carrier generation layer and the second hole transport layer are sequentially stacked in that order, the second electron transport layer is disposed on a surface of the first quantum dot light emitting layer away from the first hole transport layer, and the second hole transport layer is disposed on a surface of the second quantum dot light emitting layer away from the first electron transport layer;
• the anode is configured for providing a first hole, the cathode is configured for providing a first electron, the hole injection layer is configured for injecting the first hole into the first hole transport layer, the first hole transport layer is configured for transporting the first hole to the first quantum dot light emitting layer, the electron injection layer is configured for injecting the first electron into the first electron transport layer, the first electron transport layer is configured for transporting the first electron to the second quantum dot light emitting layer, the carrier generation layer is configured for generating a second electron and a second hole, the second electron transport layer is configured for transporting the second electron to the first quantum dot light emitting layer, the second hole transport layer is configured for transporting the second hole to the second quantum dot light emitting layer, the second electron and the first hole are configured to be recombined in the first quantum dot light emitting layer to emit a first light, the second hole and the first electron are configured to be recombined in the second quantum dot light emitting layer to emit a second light, and the second electron transport layer comprises a water/alcohol-soluble polymer.