Method for making thin film transistor
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsDong-Qi Li, Yang Wei, Kai-Li Jiang, Shou-Shan Fan
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Abstract
A method for making thin film transistor includes: providing a gate electrode and forming an insulating layer on the gate electrode; providing a carbon nanotube film comprising a plurality of metallic carbon nanotubes and a plurality of semiconducting carbon nanotubes; laying the carbon nanotube film on a surface of the insulating layer, and placing the carbon nanotube film under a scanning electron microscope to take photo of the carbon nanotube film to distinguish the plurality of metallic carbon nanotubes and the plurality of semiconducting carbon nanotubes; removing the metallic carbon nanotubes, and forming a source electrode and a drain electrode on a surface of the semiconducting layer.
Claims16
A method for making semiconducting layer comprising:
- S1:
- providing a gate electrode and forming an insulating layer on the gate electrode;
- S2:
- providing a carbon nanotube film comprising a plurality of metallic carbon nanotubes and a plurality of semiconducting carbon nanotubes;
- S3:
- laying the carbon nanotube film on a surface of the insulating layer, and placing the carbon nanotube film under a scanning electron microscope to take photo of the carbon nanotube film to distinguish the plurality of metallic carbon nanotubes and the plurality of semiconducting carbon nanotubes;
- S4:
- removing the metallic carbon nanotubes from the carbon nanotube film to form a semiconducting layer;
- and
- S5:
- forming a source electrode and a drain electrode on a surface of the semiconducting layer, wherein the source electrode and the drain electrode are electrically coupled with the semiconducting layer.
Dependencies are inferred from the claim text.