US 9,960,353 B2 · Method of fabricating an organic photodiode with dual electron blocking layers

Abstract

Embodiments of forming an image sensor with an organic photodiode are provided. The organic photodiode uses dual electron-blocking layers formed next to the anode of the organic photodiode to reduce dark current. By using dual electron-blocking layers, the values of highest occupied molecular orbital (HOMO) for the neighboring anode layer and the organic electron-blocking layer are matched by one of the dual electron-blocking layers to form a photodiode with good performance. The values of the lowest occupied molecular orbital (LOMOs) of the dual electron-blocking layers are selected to be lower than the neighboring anode layer to reduce dark current.

Claims18

Dependent claims

A method of forming an organic photodiode, comprising:

forming a first electrode layer;
depositing by physical vapor deposition (PVD) a first electron-blocking layer of V2O5 over the first electrode layer;
depositing a second electron-blocking layer using PVD over the first electron-blocking layer, wherein the second electron-blocking layer includes MoO3, wherein the second electron-blocking layer is deposited having a first thickness and the first electron-blocking layer is deposited having a second thickness, the first thickness less than the second thickness;
forming an organic P-type layer over the second electron-blocking layer;
forming an organic active layer over the organic P-type layer;
forming an organic N-type layer over the organic active layer;
forming a hole-blocking layer over the organic N-type layer;
and
forming a second electrode layer over the hole-blocking layer.

6 more elements

A method of fabricating an organic photodiode, comprising:

providing a first electrode layer having a first work function;
depositing using physical vapor deposition a first electron-blocking layer over the first electrode layer, wherein the first electron-blocking layer has a first value of highest occupied molecular orbital (HOMO), wherein the first value of HOMO is substantially equal to the first work function;
depositing using physical vapor deposition a second electron-blocking layer of MoO 3 directly over the first electron-blocking layer, wherein the second electron-blocking layer includes a metal-oxide having a second value of HOMO, and wherein the second electron-blocking layer is thinner than the first electron-blocking layer;
depositing a plurality of organic layers over the first and second electron-blocking layers;
and
forming a second electrode layer over the plurality of organic layers, wherein a lowest occupied molecular orbital (LOMO) value of at least one of the plurality of organic layers is substantially equal to the LOMO value of the second electrode layer.

3 more elements

A method of fabricating an organic photodiode, comprising:

providing a first electrode layer having a first work function;
depositing a first electron-blocking layer by physical vapor deposition of V2O5 directly on the first electrode, wherein the first electron-blocking layer over the first electrode layer, wherein the first electrode layer has a first value of highest occupied molecular orbital (HOMO), wherein the first value of HOMO is substantially equal to the first work function;
depositing a second electron-blocking layer directly over the first electron-blocking layer, wherein the second electron-blocking layer includes a metal-oxide having a second value of HOMO different than the first, and wherein the second electron-blocking layer is thinner than the first electron-blocking layer;
depositing a plurality of organic layers over the first and second electron-blocking layers;
forming a second electrode layer over the plurality of organic layers;
forming a photoresist layer over the second electrode layer;
using the photoresist layer as a masking element in an etching process, wherein the etching process includes etching the first electrode layer, the first electron-blocking layer, the second electron-blocking layer, the plurality of organic layers, and the second electrode layer to form an opening;
and
filling the opening with a light-blocking structure.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application

15/338,801Filed 31 Oct 2016 · division

Priority

28 Aug 2013

Published

US 2017/0047517 A116 Feb 2017

Granted

1 May 2018

Term ends

Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10K 71/30
Manufacture or treatment specially adapted for the organic devices covered by this subclass: doping active layers, e.g. electron transporting layers
H10K 30/211
Comprising organic-organic junctions, e.g. donor-acceptor junctions: comprising multiple junctions, e.g. double heterojunctions
H10K 30/30
Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation: comprising bulk…
H10K 39/30
Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00:…

Method of fabricating an organic photodiode with dual electron blocking layers

Life of this patent

Method of fabricating an organic photodiode with dual electron blocking layers

Life of this patent

Abstract

Claims18