Method of fabricating switching element and method of manufacturing resistive memory device
AssigneeSK hynix Inc.
InventorTae Jung Ha
Life of this patent
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Abstract
A method of manufacturing a switching element includes forming a first electrode layer over a substrate, forming a switching structure on the first electrode layer, and forming a second electrode layer on the switching structure. The switching structure includes a plurality of unit switching layers that includes a first unit switching layer and a second unit switching layer. Forming the first unit switching layer includes forming a first unit insulation layer, and injecting first dopants into the first unit insulation layer by performing a first ion implantation process. Forming the second unit switching layer includes forming a second unit insulation layer, and injecting second dopants into the second unit insulation layer by performing a second implantation process.
Claims20
A method of manufacturing a switching element comprising:
- forming a first electrode layer over a substrate;
- forming a switching structure on the first electrode layer, the switching structure including a plurality of unit switching layers that includes a first unit switching layer and a second unit switching layer;
- and
- forming a second electrode layer on the switching structure,
- wherein forming the first unit switching layer comprises:
- forming a first unit insulation layer;
- and
- injecting first dopants into the first unit insulation layer by performing a first ion implantation process, thereby forming the first unit switching layer, and
- wherein forming the second unit switching layer comprises:
- forming a second unit insulation layer directly on the first unit switching layer;
- and
- injecting second dopants into the second unit insulation layer by performing a second implantation process, thereby forming the second unit switching layer.
A method of manufacturing a resistive memory device, the method comprising:
- forming a first electrode layer over a substrate;
- forming a switching structure on the first electrode layer, the switching structure including a plurality of unit switching layers that includes a first unit switching layer and a second unit switching layer;
- forming a second electrode layer on the switching structure;
- forming a resistive memory material layer on the second electrode layer;
- and
- forming a third electrode layer on the resistive memory material layer,
- wherein forming the first unit switching layer comprises:
- forming a first unit insulation layer;
- and
- injecting first dopants into the first unit insulation layer by performing a first ion implantation process, thereby forming the first unit switching layer, and
- wherein forming the second unit switching layer comprises:
- forming a second unit insulation layer directly on the first unit switching layer;
- and
- injecting second dopants into the second unit insulation layer by performing a second implantation process, thereby forming the second unit switching layer.
The method of claim of 16, wherein at least one of a dopant type, ion implantation energy, and a dose of the first dopants in the first ion implantation process is different from a corresponding one in the second ion implantation process.
Dependencies are inferred from the claim text.