Resistive random-access memory structure and method for fabricating the same
AssigneeWinbond Electronics Corp.
InventorsYi-Hsiu Chen, Ming-Hung Hsieh, Po-Yen Hsu, Ting-Ying Shen
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Abstract
A resistive random-access memory structure and a method for fabricating a resistive random-access memory structure are described. A first dielectric layer is formed on a substrate. A plurality of bottom electrodes are independently embedded in the first dielectric layer. A transition metal oxide layer covers the plurality of bottom electrodes and extends onto a portion of the first dielectric layer. The minimum distance between the bottom electrode and a sidewall of the transition metal oxide layer is a first distance. The first distance is in a range of 10 nm to 200 μm. A top electrode is formed on the transition metal oxide layer.
Claims16
A resistive random-access memory structure, comprising:
- a first dielectric layer formed on a substrate;
- a plurality of bottom electrodes independently embedded in the first dielectric layer;
- a transition metal oxide layer covering the plurality of bottom electrodes and extending onto a portion of the first dielectric layer, wherein a minimum distance between the bottom electrode and a sidewall of the transition metal oxide layer is a first distance, and wherein the first distance is in a range of 10 nm to 200 μm;
- a top electrode formed on the transition metal oxide layer.
A method for fabricating a resistive random-access memory structure, comprising:
- forming a first dielectric layer on a substrate;
- patterning the first dielectric layer to form a plurality of first openings;
- forming a plurality of bottom electrodes in the plurality of first openings;
- forming a transition metal oxide layer covering the plurality of bottom electrodes and extending onto a portion of the first dielectric layer, wherein a minimum distance between the bottom electrode and a sidewall of the transition metal oxide layer is a first distance, and wherein the first distance is in a range of 10 nm to 200 μm;
- forming a top electrode on the transition metal oxide layer.
Dependencies are inferred from the claim text.