Multi-layered contact to semiconductor structure
AssigneeSensor Electronic Technology, Inc.
InventorsMichael Shur, Alexander Dobrinsky
Life of this patent
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Abstract
A multi-layered contact to a semiconductor structure and a method of making is described. In one embodiment, the contact includes a discontinuous Chromium layer formed over the semiconductor structure. A discontinuous Titanium layer is formed directly on the Chromium layer, wherein portions of the Titanium layer extend into at least some of the discontinuous sections of the Chromium layer. A discontinuous Aluminum layer is formed directly on the Chromium layer, wherein portions of the Aluminum layer extend into at least some of the discontinuous sections of the Titanium layer and the Chromium layer.
Claims17
A device, comprising:
- a semiconductor structure;
- a contact to the semiconductor structure, comprising:
- a discontinuous Chromium layer formed over the semiconductor structure;
- a discontinuous Titanium layer formed directly on the Chromium layer, wherein portions of the Titanium layer extend into at least some discontinuous sections of the Chromium layer;
- and,
- a discontinuous Aluminum layer formed directly on the Titanium layer, wherein portions of the Aluminum layer extend into at least some discontinuous sections of the Titanium layer and the Chromium layer.
A method, comprising:
- forming a contact to a semiconductor structure, the contact including a Chromium layer, a Titanium layer and an Aluminum layer;
- annealing the contact to form a discontinuous Chromium layer over the semiconductor structure, a discontinuous Titanium layer directly on the Chromium layer, wherein portions of the Titanium layer extend into at least some discontinuous sections of the Chromium layer, and a discontinuous Aluminum layer directly on the Titanium layer, wherein portions of the Aluminum layer extend into at least some discontinuous sections of the Titanium layer and the Chromium layer.
Dependencies are inferred from the claim text.