Light emitting diode with high efficiency

A light emitting diode comprising:

• a light emitting structure comprising a second conductive type semiconductor layer, an active layer disposed on an upper surface of the second conductive type semiconductor layer, and a first conductive type semiconductor layer disposed on an upper surface of the active layer;
• a first electrode electrically connected to the first conductive type semiconductor layer;
• a current blocking layer disposed on a lower surface of the light emitting structure;
• and
• a second electrode disposed on a lower surface of the light emitting structure and electrically connected to the second conductive type semiconductor layer,
• wherein the second electrode comprises:
• a first reflective metal layer adjoining the second conductive type semiconductor layer;
• and
• a second reflective metal layer covering a lower surface of the current blocking layer and a lower surface of the first reflective metal layer,
• wherein a bonding strength between the current blocking layer and the second reflective metal layer is greater than a bonding strength between the current blocking layer and the first reflective metal layer, and
• wherein the first reflective metal layer is spaced apart from the current blocking layer.

A light emitting diode comprising:

• a light emitting structure comprising a second conductive type semiconductor layer, an active layer disposed on an upper surface of the second conductive type semiconductor layer, and a first conductive type semiconductor layer disposed on an upper surface of the active layer;
• a first electrode electrically connected to the first conductive type semiconductor layer;
• a current blocking layer disposed on a lower surface of the light emitting structure;
• and
• a second electrode electrically connected to the second conductive type semiconductor layer,
• wherein the second electrode comprises:
• a first reflective metal layer adjoining the second conductive type semiconductor layer;
• and
• a second reflective metal layer covering a lower surface of the current blocking layer and a lower surface of the first reflective metal layer, the second reflective metal layer adjoining a portion of the second conductive type semiconductor layer, and
• wherein the first reflective metal layer is spaced apart from the current blocking layer.