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US 9,960,315 B2Granted
Light emitting heterostructure with partially relaxed semiconductor layer
AssigneeSensor Electronic Technology, Inc.
InventorsMaxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
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Abstract
A light emitting heterostructure including a partially relaxed semiconductor layer is provided. The partially relaxed semiconductor layer can be included as a sublayer of a contact semiconductor layer of the light emitting heterostructure. A dislocation blocking structure also can be included adjacent to the partially relaxed semiconductor layer.
Claims20
A heterostructure, comprising:
- a light generating structure having a first side and a second side;
- an n-type contact semiconductor layer located on the first side of the light generating structure;
- a p-type contact semiconductor layer located on the second side of the light generating structure, wherein at least one of the contact semiconductor layers includes an embedded partially relaxed sublayer;
- and
- a dislocation blocking structure located between the partially relaxed sublayer and the light generating structure, wherein the dislocation blocking structure includes a plurality of tensile sublayers alternating with a plurality of compressive sublayers, wherein one or more of the sublayers is partially relaxed.
2 more elements
A device comprising:
- a substrate;
- a buffer layer adjacent to the substrate;
- a mesa structure over the buffer layer, the mesa structure including:
- a light generating structure having a first side and a second side, wherein the substrate is transparent to light generated by the light generating structure;
- an n-type contact semiconductor layer located on the first side of the light generating structure;
- and
- a p-type contact semiconductor layer located on the second side of the light generating structure, wherein at least one of the contact semiconductor layers includes an embedded partially relaxed sublayer, and wherein at least one of the contact semiconductor layers is located between the light generating structure and the buffer layer;
- and
- a dislocation blocking structure located between the partially relaxed sublayer and the light generating structure, wherein the dislocation blocking structure includes a plurality of tensile sublayers alternating with a plurality of compressive sublayers, wherein one or more of the sublayers is partially relaxed.
6 more elements
A heterostructure, comprising:
- a light generating structure having a first side and a second side;
- an n-type contact semiconductor layer located on the first side of the light generating structure;
- and
- a p-type contact semiconductor layer located on the second side of the light generating structure, wherein at least one of the contact semiconductor layers includes a partially relaxed sublayer having a plurality of modulated regions disposed in a lateral direction.
1 more element
Dependencies are inferred from the claim text.