Photoelectronic device including charge barrier

A photoelectronic device comprising:

• a semiconductor substrate including a plurality of semiconductor regions doped with a first type impurity and insulating regions between the adjacent semiconductor regions;
• a second semiconductor layer that covers at least the plurality of semiconductor regions on the semiconductor substrate and is doped with a second type impurity of an opposite type to the first type impurity;
• a transparent electrode on a second surface of the second semiconductor layer, the second surface being opposite a first surface on which the semiconductor substrate is formed;
• and
• a barrier layer between the second semiconductor layer and the semiconductor substrate or between the second semiconductor layer and the transparent electrode,
• wherein the second semiconductor layer has a band gap energy less than that of the semiconductor substrate.