US 9,960,308 B2Granted

Photoelectric conversion element

AssigneeMicro Signal Co., Ltd.

InventorsKunihiro Watanabe, Masaya Okada, Kazunori Nohara

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Abstract

A number of micro-sized rectangular dot-like n-type semiconductor regions 121 are created in a p-type semiconductor region which is a base body 11. Contact parts 14, each of which is in contact with one n-type semiconductor region 121 and almost entirely covers the same region, are mutually connected by a wire part 15 as a common cathode terminal. The n-type semiconductor regions 121 receives no light; their function is to collect carriers generated within and outside the surrounding depletion layers. Appropriate setting of the spacing of the n-type semiconductor regions 121 enables efficient collection of the carriers generated in the p-type semiconductor region while improving the SN ratio of the photo-detection signal by a noise-reduction effect due to a decrease in the p-n junction capacitance. Carriers originating from light of shorter wavelengths are barely reflected in the photo-detection signal. Thus, unfavorable influences of the shorter wavelengths of light are eliminated.

Claims19

Dependent claims

A photoelectric conversion element, comprising:

a) a first region of a first conductivity type, the first region being either a semiconductor base body itself or a region which is formed in the semiconductor base body and is different from the semiconductor base body;
b) a point-like second region of a second conductivity type different from the first conductivity type, the point-like second region formed by diffusing an impurity or growing an epitaxial layer on a surface of the first region within a light-receiving range;
c) a light-blocking part for blocking light incident on the point-like second region among light incident on the light-receiving range on an entrance surface which receives light from outside;
and
d) a wire part including a first branch and a second branch arranged in parallel with each other within the light-receiving range,
wherein the point-like second region produces a photo-detection signal by collecting, from a surrounding area, carriers generated in the first region by the light incident on the light-receiving range,
wherein a plurality of the point-like second regions are arranged in a mutually separated form within the light-receiving range for obtaining a single photo-detection signal, with the plurality of point-like second regions mutually connected so as to total photo-detection signals produced by the individual point-like second regions, and
wherein the wire part connects the plurality of the point-like second regions via the first branch and the second branch.

5 more elements

A photoelectric conversion element, comprising:

a) a first region of a first conductivity type, the first region being either a semiconductor base body itself or a region which is formed in the semiconductor base body and is different from the semiconductor base body;
and
b) a plurality of the point-like second regions of a second conductivity type different from the first conductivity type arranged in a mutually separated form within a light-receiving range for obtaining a single photo-detection signal, with the plurality of the point-like second regions mutually connected so as to total photo-detection signals produced by the individual point-like second regions, the point-like second region formed by diffusing an impurity or growing an epitaxial layer on a surface of the first region within the light-receiving range,
where the point-like second region produces a photo-detection signal by collecting, from a surrounding area, carriers generated in the first region by the light incident on the light-receiving range, and
wherein the point-like second region is a region whose area is equal to or smaller than 1% of the entire light-receiving range.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application: 15/295,359Filed 17 Oct 2016
Priority: JP 2016-10145220 May 2016
Published: US 2017/0338366 A123 Nov 2017
Granted: 1 May 2018
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10F 30/221
The devices having only one potential barrier, e.g. photodiodes: the potential barrier being a PN homojunction
H10F 77/206
Electrodes: for devices having potential barriers
H10F 77/334
For filtering or shielding light, e.g. multicolour filters for photodetectors: for shielding light, e.g. light blocking layers or cold shields for…
H10W 42/20
Arrangements for protection of devices: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons