Avalanche photodiode using silicon nanowire and silicon nanowire photomultiplier using the same

A silicon nanowire photomultiplier, comprising:

• an avalanche photodiode using a silicon nanowire, the avalanche photodiode comprising:
• a first silicon nanowire formed of silicon (Si);
• a first conductive region formed on one surface of the first silicon nanowire and doped with a first dopant;
• a second conductive region formed on one surface of the first silicon nanowire and extending in the longitudinal direction from the first conductive region and doped with a second dopant having a conductivity type different from that of the first dopant,
• wherein the first silicon nanowire is formed on a silicon substrate arranged parallel to a surface of the silicon substrate, has an inverted triangular shape cross-section,
• wherein, when a magnitude of a reverse voltage applied to both ends of the first silicon nanowire, the silicon nanowire is configured to generate avalanche multiplication of inner current based on incident light,
• wherein the first silicon nanowire further comprises an avalanche region, which is formed at a junction between the first conductive region and the second conductive region and in which avalanche multiplication of inner current occurs due to incidence of light from outside,
• wherein the first conductive region is configured such that a P-type semiconductor region, a P(i)-type semiconductor region and a P+-type semiconductor region are sequentially formed in a longitudinal direction, and
• wherein the second conductive region is configured such that an N-type semiconductor region and an N+-type semiconductor region are sequentially formed in a longitudinal direction so as to be arranged continuously from the P-type semiconductor region of the first conductive region, and
• a quenching resistor formed of a second silicon nanowire comprising silicon (Si), in which one end of the second silicon nanowire is connected in series to one end of the first silicon nanowire,
• wherein the quenching resistor comprises one of a P-type dopant or an N-type dopant, and
• wherein the quenching resistor is configured such that the second silicon nanowire is formed continuously in a longitudinal direction from one end of the first silicon nanowire, and an N-type semiconductor region and an N+-type semiconductor region are sequentially formed in a longitudinal direction.

A silicon nanowire photomultiplier, comprising:

• an avalanche photodiode array comprising one or more avalanche photodiodes, which are spaced apart from each other at a predetermined interval in a width direction, the avalanche photodiodes comprising:
• a first silicon nanowire formed of silicon (Si);
• a first conductive region formed on one surface of the first silicon nanowire and doped with a first dopant;
• a second conductive region formed on one surface of the first silicon nanowire and extending in the longitudinal direction from the first conductive region and doped with a second dopant having a conductivity type different from that of the first dopant,
• wherein the first silicon nanowire is formed on a silicon substrate arranged parallel to a surface of the silicon substrate, has an inverted triangular shape cross-section,
• wherein, when a magnitude of a reverse voltage applied to both ends of the first silicon nanowire, the silicon nanowire is configured to generate avalanche multiplication of inner current based on incident light;
• and
• a quenching resistor array comprising one or more quenching resistors, which are formed of silicon nanowires and are electrically connected to one end of the first silicon nanowire,
• wherein the quenching resistor array is configured such that the quenching resistors comprise one of a P-type dopant or an N-type dopant, and
• wherein the quenching resistor array is spaced apart from one end of the avalanche photodiode array at a predetermined interval in a longitudinal direction, and each of the quenching resistors is configured such that a P+-type semiconductor region, a P-type semiconductor region and a P+-type semiconductor region are sequentially formed in a longitudinal direction.

A silicon nanowire photomultiplier, comprising:

• an avalanche photodiode array comprising one or more avalanche photodiodes, which are spaced apart from each other at a predetermined interval in a width direction, the avalanche photodiodes comprising:
• a first silicon nanowire formed of silicon (Si);
• a first conductive region formed on one surface of the first silicon nanowire and doped with a first dopant;
• and
• a second conductive region formed on one surface of the first silicon nanowire and extending in the longitudinal direction from the first conductive region and doped with a second dopant having a conductivity type different from that of the first dopant,
• wherein the first silicon nanowire is formed on a silicon substrate arranged parallel to a surface of the silicon substrate, has an inverted triangular shape cross-section,
• wherein, when a magnitude of a reverse voltage applied to both ends of the first silicon nanowire, the silicon nanowire is configured to generate avalanche multiplication of inner current based on incident light;
• and
• a quenching resistor array comprising one or more quenching resistors, which are formed of silicon nanowires and are electrically connected to one end of the first silicon nanowire,
• wherein the quenching resistor array is configured such that the quenching resistors comprise one of a P-type dopant or an N-type dopant, and
• wherein the quenching resistor array is formed continuously in a longitudinal direction from one end of the avalanche photodiode array, and each of the quenching resistors is configured such that an N-type semiconductor region and an N+-type semiconductor region are sequentially formed in a longitudinal direction.