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US 9,960,297 B2Granted
Optical cladding layer design
AssigneeJuniper Networks, Inc.
InventorsErik Johan Norberg, Anand Ramaswamy, Brian Koch
Life of this patent
Estimating the term…
Abstract
Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.
Claims19
An apparatus, comprising:
- a cladding layer defining a longitudinal direction transverse to a first surface of the cladding layer and a lateral direction parallel to the cladding layer, the cladding layer having a first thickness in a first lateral region and a second thickness in a second lateral region, the second thickness being greater than the first thickness;
- a silicon semiconductor layer positioned on a second surface of the cladding layer opposite the first surface of the cladding layer, the silicon semiconductor layer having a third thickness in a third lateral region, at least a portion of the third lateral region positioned longitudinally adjacent to at least a portion of the first lateral region;
- and
- a buried oxide layer positioned on the silicon semiconductor layer, the buried oxide layer having a fourth thickness in a fourth lateral region, the fourth lateral region being longitudinally adjacent to at least a portion of the third lateral region, wherein the buried oxide layer includes a hole, at least a portion of the hole being longitudinally aligned with at least a portion of the second lateral region.
1 more element
An apparatus, comprising:
- a cladding layer defining a longitudinal direction transverse to a first surface of the cladding layer and a lateral direction parallel to the cladding layer, the cladding layer having a first thickness in a first lateral region and a second thickness in a second lateral region, the second thickness being greater than the first thickness;
- a silicon semiconductor layer positioned on a second surface of the cladding layer opposite the first surface of the cladding layer, the silicon semiconductor layer having a third thickness in a third lateral region, the third lateral region positioned longitudinally adjacent to the first lateral region, the silicon semiconductor layer having a sixth thickness in a sixth lateral region, the sixth thickness being greater than the third thickness, the sixth lateral region being longitudinally adjacent to at least a portion of the second lateral region;
- a buried oxide layer positioned on the silicon semiconductor layer, the buried oxide layer having a fourth thickness in a fourth lateral region, the fourth lateral region being longitudinally adjacent to at least a portion of the third lateral region, the buried oxide layer including a hole, at least a portion of the hole being longitudinally aligned with at least a portion of the sixth lateral region;
- and
- a thermally conductive material positioned in the hole and extending to at least the sixth lateral region, the thermally conductive material having a thermal conductivity greater than a thermal conductivity of the buried oxide layer.
2 more elements
An apparatus, comprising:
- a cladding layer defining a longitudinal direction transverse to a first surface of the cladding layer and a lateral direction parallel to the cladding layer, the cladding layer having a first thickness in a first lateral region and a second thickness in a second lateral region, the second thickness being greater than the first thickness;
- a silicon semiconductor layer positioned on a second surface of the cladding layer opposite the first surface of the cladding layer, the silicon semiconductor layer having a third thickness in a third lateral region, at least a portion of the third lateral region positioned longitudinally adjacent to at least a portion of the first lateral region;
- a buried oxide layer positioned on the silicon semiconductor layer, the buried oxide layer having a fourth thickness in a fourth lateral region, the fourth lateral region being longitudinally adjacent to at least a portion of the third lateral region, the buried oxide layer and the silicon semiconductor layer defining a hole through the buried oxide layer and the silicon semiconductor layer, at least a portion of the hole being longitudinally aligned with at least a portion of the second lateral region;
- and
- a thermally conductive material positioned in the hole and extending to at least the second lateral region, the thermally conductive material having a thermal conductivity greater than a thermal conductivity of the buried oxide layer.
2 more elements
Dependencies are inferred from the claim text.