Thin-film transistor
AssigneeShenzhen China Star Optoelectronics Technology Co., Ltd.
InventorsLongqiang Shi, Zhiyuan Zeng, Hejing Zhang, Yutong Hu
Life of this patent
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Abstract
Disclosed is a thin-film transistor. The thin-film transistor includes: a substrate; a first gate, a first gate insulation layer, a semiconductor layer, an etching stop layer, and the second gate stacked on a surface of the substrate, in which the semiconductor layer has a thickness of 200 nm-2000 nm; the etching stop layer includes a first via and a second via formed therein; and the first via and the second via are arranged to each correspond to the semiconductor layer; and a source and a drain respectively extending through the first via and the second via to connect to the semiconductor layer. The thin-film transistor has an increased ON-state current and switching speed.
Claims10
A thin-film transistor, comprising:
- a substrate;
- a first gate, a first gate insulation layer, a semiconductor layer, an etching stop layer, and a second gate stacked on a surface of the substrate, wherein the semiconductor layer has a thickness that is that is between 200 nm and 2000 nm and is sufficient for formation of two current channels in the semiconductor layer and wherein first gate, the first gate insulation layer, the semiconductor layer, the etching stop layer, and the second gate are stacked sequentially in a vertical direction on the surface of the substrate to form a single stack;
- the etching stop layer comprising a first via and a second via formed therein, the first via and the second via being arranged to each correspond to the semiconductor layer;
- and
- a source and a drain, which respectively extend through the first via and the second via to connect to the semiconductor layer;
- wherein the two current channels formed in the semiconductor layer comprise a first current channel and a second current channel that are respectively formed in a lower portion and an upper portion of the semi conductive layer and are respectively adjacent to the first gate insulation layer and the etching stop layer.
A thin-film transistor, comprising:
- a substrate;
- a first gate, a first gate insulation layer, two semiconductor layers that are stacked vertically on each other and in direct contact with each other for formation of two current channels therein, an etching stop layer, and a second gate stacked on a surface of the substrate, wherein first gate, the first gate insulation layer, the at least two semiconductor layers that are stacked vertically on each other, the etching stop layer, and the second gate are stacked sequentially in a vertical direction on the surface of the substrate to form a single stack;
- the etching stop layer comprising a first via and a second via formed therein, the first via and the second via being arranged to each correspond to the semiconductor layers;
- a source and a drain, which respectively extend through the first via and the second via to connect to the semiconductor layers;
- wherein the two current channels are respectively formed in the two semiconductor layers that are stacked on each other and are in direct contact with each other.
Dependencies are inferred from the claim text.