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US 9,960,280 B2Granted
Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYuichi Sato, Naoto Yamade
Life of this patent
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Abstract
A transistor with stable electric characteristics is provided. An aluminum oxide film containing boron is formed in order to prevent hydrogen from diffusing into an oxide semiconductor film.
Claims16
A semiconductor device comprising:
- a first aluminum oxide film over a substrate;
- a transistor over the first aluminum oxide film, the transistor comprising:
- a gate electrode;
- an oxide semiconductor film comprising a channel formation region;
- and
- a gate insulating film between the gate electrode and the oxide semiconductor film;
- and
- a second aluminum oxide film over the transistor,
- wherein the first aluminum oxide film, the transistor, and the second aluminum oxide film overlap each other, and
- wherein each of the first aluminum oxide film and the second aluminum oxide film contains boron.
7 more elements
A semiconductor device comprising:
- a first aluminum oxide film over a substrate;
- a transistor over the first aluminum oxide film, the transistor comprising:
- a gate electrode;
- an oxide semiconductor film comprising a channel formation region;
- and
- a gate insulating film between the gate electrode and the oxide semiconductor film;
- and
- a second aluminum oxide film over the transistor,
- wherein the first aluminum oxide film, the transistor, and the second aluminum oxide film overlap each other,
- wherein each of the first aluminum oxide film and the second aluminum oxide film contains boron, and
- wherein a maximum concentration of boron in each of first aluminum oxide film and the second aluminum oxide film is higher than or equal to 5.0×1020 atoms/cm3 and lower than or equal to 1.0×1022 atoms/cm3.
8 more elements
A semiconductor device comprising:
- a first transistor, a channel formation region of the first transistor comprising crystalline silicon;
- a first aluminum oxide film over the first transistor;
- a second transistor over the first aluminum oxide film, the second transistor comprising:
- a gate electrode;
- an oxide semiconductor film comprising a channel formation region;
- and
- a gate insulating film between the gate electrode and the oxide semiconductor film;
- and
- a second aluminum oxide film over the second transistor,
- wherein the first aluminum oxide film, the second transistor, and the second aluminum oxide film overlap each other, and
- wherein each of the first aluminum oxide film and the second aluminum oxide film contains boron.
8 more elements
Dependencies are inferred from the claim text.