FinFET device for device characterization

A FinFET device for device characterization, the FinFET device comprising:

• an active fin that includes a source fin, a depletion fin, and a drain fin, wherein the depletion fin is disposed between the source fin and the drain fin;
• a side fin extending from the depletion fin, wherein the side fin is coupled to a body contact configured to provide access to the FinFET device for the device characterization, and further wherein the side fin extends substantially perpendicular from the active fin;
• and
• a gate electrode and a gate dielectric disposed over the depletion fin, wherein the gate dielectric separates the gate electrode from the depletion fin and the gate electrode and the gate dielectric extend past the active fin to overlap a portion of the side fin, and further wherein a width of the gate electrode and the gate dielectric is greater than a width of the side fin, such that the gate electrode and the gate dielectric are disposed over a portion of the source fin and a portion of the drain fin.

A method for forming a FinFET device for device characterization, the method comprising:

• forming an active fin that includes a source fin, a depletion fin, and a drain fin, wherein the depletion fin is disposed between the source fin and the drain fin;
• forming a side fin extending from the depletion fin, wherein the side fin extends substantially perpendicular from the active fin;
• forming a body contact coupled to the side fin, wherein the body contact is configured to provide access to the FinFET device for the device characterization;
• forming a gate electrode and a gate dielectric over the depletion fin, wherein the gate dielectric separates the gate electrode from the depletion fin;
• performing a first implantation process using a first implant mask to form lightly doped source and drain (LDD) regions in the source fin and the drain fin;
• and
• performing a second implantation process using a second implant mask to form LDD regions in the side fin.