Method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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Abstract
A transistor with stable electrical characteristics is provided. Provided is a method for manufacturing a semiconductor device that includes, over a substrate, an oxide semiconductor, a first conductor, a first insulator, a second insulator, and a third insulator. The oxide semiconductor is over the first insulator. The second insulator is over the oxide semiconductor. The third insulator is over the second insulator. The first conductor is over the third insulator. The oxide semiconductor has a first region and a second region. To form the first region, ion implantation into the oxide semiconductor is performed using the first conductor as a mask, and then hydrogen is added to the oxide semiconductor using the first conductor as a mask.
Claims21
A method for manufacturing a semiconductor device, comprising:
- forming an oxide semiconductor comprising indium, gallium, and zinc;
- forming a first insulator over the oxide semiconductor;
- forming a first conductor over the first insulator, wherein the first conductor overlaps with the oxide semiconductor;
- after forming the first conductor, forming an oxygen vacancy site in a first position of the oxide semiconductor, wherein the first position does not overlap with the first conductor;
- and
- supplying hydrogen into the oxygen vacancy site in the first position of the oxide semiconductor.
A method for manufacturing a semiconductor device, comprising:
- forming an oxide semiconductor comprising indium, gallium, and zinc;
- forming a first insulator over the oxide semiconductor;
- forming a first conductor over the first insulator, wherein the first conductor overlaps with the oxide semiconductor;
- after forming the first conductor, forming an oxygen vacancy site in a first position of the oxide semiconductor, wherein the first position does not overlap with the first conductor;
- and
- after forming the oxygen vacancy site, forming a donor level in the first position.
A method for manufacturing a semiconductor device, comprising:
- forming an oxide semiconductor comprising indium, gallium, and zinc;
- forming a first insulator over the oxide semiconductor;
- forming a first conductor over the first insulator, wherein the first conductor overlaps with the oxide semiconductor;
- after forming the first conductor, implanting an ion into a first position of the oxide semiconductor from the first conductor side, wherein the first position does not overlap with the first conductor;
- and
- after implanting the ion, performing a heat treatment on the oxide semiconductor.
Dependencies are inferred from the claim text.