Method for manufacturing thin film transistor
AssigneeWuhan China Star Optoelectronics Technology Co., Ltd.
InventorJiangbo Ye
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a thin film transistor is provided. The method comprises depositing sequentially a gate insulating layer and a gate metal layer on a semiconductor substrate; etching the gate metal layer uncovered by the first photoresist pattern; implementing a first ion implantation on the semiconductor substrate; etching a side wall of the first photoresist pattern; implementing a second ion implantation on the semiconductor substrate to form a source and a drain. The source and the drain include a heavily doped drain region and a lightly doped drain region.
Claims20
A method for manufacturing a thin film transistor, comprising steps of:
- depositing sequentially a gate insulating layer and a gate metal layer on a semiconductor substrate;
- forming a first photoresist pattern on the gate metal layer, comprising:
- coating a photoresist on the gate metal layer;
- exposing the photoresist through a mask;
- forming the first photoresist pattern after developing;
- and
- etching the gate metal layer uncovered by the first photoresist pattern to form a gate electrode, wherein a width of the gate electrode is less than a width of the first photoresist pattern;
- forming a preparation source and a preparation drain by implementing a first ion implantation on the semiconductor substrate through using the first photoresist pattern as a mask;
- etching a side wall of the first photoresist pattern to form a second photoresist pattern, wherein a width of the second photoresist pattern is less than the width of the first photoresist pattern;
- and
- forming a source and a drain by implementing a second ion implantation to the semiconductor substrate through using the second photoresist pattern as a mask, wherein the source and the drain include a heavily doped drain region and a lightly doped drain region, and a width of the lightly doped drain region is equal to the smaller of the width of the second photoresist pattern and the width of the gate electrode.
A method for manufacturing a thin film transistor, comprising steps of:
- depositing sequentially a gate insulating layer and a gate metal layer on a semiconductor substrate;
- forming a first photoresist pattern on the gate metal layer, and etching the gate metal layer uncovered by the first photoresist pattern to form a gate electrode, wherein a width of the gate electrode is less than a width of the first photoresist pattern;
- forming a preparation source and a preparation drain by implementing a first ion implantation to the semiconductor substrate through using the first photoresist pattern as a mask;
- etching a side wall of the first photoresist pattern to form a second photoresist pattern, wherein a width of the second photoresist pattern is less than the width of the first photoresist pattern;
- and
- forming a source and a drain by implementing a second ion implantation to the semiconductor substrate through using the second photoresist pattern as a mask, wherein the source and the drain include a heavily doped drain region and a lightly doped drain region.
A method for manufacturing a thin film transistor, comprising steps of:
- depositing sequentially a gate insulating layer and a gate metal layer on a semiconductor substrate, wherein the gate insulating layer is a silicon nitride layer, a silicon oxide layer, or a composite layer of the silicon nitride layer and the silicon oxide layer;
- forming a first photoresist pattern on the gate metal layer, and etching the gate metal layer uncovered by the first photoresist pattern to form a gate electrode, wherein a width of the gate electrode is less than a width of the first photoresist pattern;
- forming a preparation source and a preparation drain by implementing a first ion implantation to the semiconductor substrate through using the first photoresist pattern as a mask;
- etching a side wall of the first photoresist pattern by using oxygen to form a second photoresist pattern, wherein a width of the second photoresist pattern is less than the width of the first photoresist pattern;
- and
- forming a source and a drain by implementing a second ion implantation to the semiconductor substrate through using the second photoresist pattern as a mask, wherein the source and the drain include a heavily doped drain region and a lightly doped drain region.
Dependencies are inferred from the claim text.