Method to improve reliability of replacement gate device
AssigneesInternational Business Machines Corporation, Globalfoundries Inc.
InventorsTakashi Ando, Eduard A. Cartier, Kisik Choi, Vijay Narayanan
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Abstract
A method of fabricating a replacement gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k dielectric layer over the area vacated by the dummy gate; depositing a thin metal layer over the high-k dielectric layer; depositing a sacrificial layer over the thin metal layer; performing a first rapid thermal anneal; removing the sacrificial layer; and depositing a metal layer of low resistivity metal for gap fill.
Claims20
A method of fabricating a gate stack for a semiconductor device, said method comprising steps of:
- after removal of a dummy gate, providing a replacement gate structure by performing steps of:
- growing a high-k dielectric layer over an area vacated by the dummy gate;
- depositing a thin metal layer over the high-k dielectric layer;
- depositing a sacrificial layer over the thin metal layer;
- performing a first rapid thermal anneal;
- removing the sacrificial layer from the thin metal layer to expose an entirety of the thin metal layer directly over a channel region of the semiconductor device;
- and
- depositing a metal layer of low resistivity metal directly on an entirety of the thin metal layer in the gate stack.
A method of fabricating a gate stack for a semiconductor device, said method comprising steps of:
- after removal of a dummy gate, providing a replacement gate structure by performing steps of:
- growing a high-k dielectric layer over an area vacated by the dummy gate;
- depositing a thin metal layer over the high-k dielectric layer;
- depositing a sacrificial layer over the thin metal layer;
- performing a first rapid thermal anneal;
- removing the sacrificial layer from the thin metal layer to expose an entirety of the thin metal layer directly over a channel region of the semiconductor device;
- depositing a metal layer of low resistivity metal directly on an entirety of the thin metal layer in the gate stack;
- and
- performing a second rapid thermal anneal after annealing the structure.
Dependencies are inferred from the claim text.