ESD protection structure and method of fabrication thereof

An integrated circuit device comprising a semiconductor substrate comprising at least one electrostatic discharge, ESD, protection structure formed within the semiconductor substrate;

• the at least one ESD protection structure comprising:
• a first semiconductor region of a first doping type;
• a second semiconductor region of the first doping type;
• a semiconductor structure of a second doping type opposite to the first doping type formed to provide lateral isolation between the first and second semiconductor regions of the first doping type;
• and
• a first contact region of the second doping type formed within a surface of the second semiconductor region of the first doping type, the surface of the second semiconductor region of the first doping type being co-planar with a surface of the semiconductor substrate;
• a thyristor structure is formed within the ESD protection structure comprising at least:
• the first contact region of the second doping type,
• the second semiconductor region of the first doping type containing the first contact region,
• the semiconductor structure of the second doping type, and
• the first semiconductor region of the first doping type;
• and
• wherein no contact region is formed within a surface of the semiconductor structure of the second doping type and no contact region is formed within a surface of the semiconductor structure of the second doping type between the first and second semiconductor regions of the first doping type, said surface of the semiconductor structure of the second doping type being co-planar with the surface of the semiconductor substrate.