Semiconductor heterobarrier electron device and method of making

A method of making a semiconductor heterobarrier electronic device comprising the following steps, not necessarily in the following order:

• providing a substrate;
• providing a pair of stacked layers comprising Group III-nitride semiconductor materials selected from the group of compounds consisting of GaN, InN, AlN, AlxGa(1-x)N, InxGa(1-x)N, AlxIn(1-x)N, AlxInyGa(1-x-y)N, where 0<x<1, 0<y<1, and 0<(x+y)<1;
• operatively connecting the stacks such that the polarity of one stack opposes the polarity of the other in the pair of stacks;
• the first of the pair of stacked layers comprising layers that are Group III-polar and the second of the pair comprising layers that are N-polar, the pair of stacked layers being configured such that the spontaneous and/or piezoelectric polarization attributable to the arrangement of the atoms of the materials in first of the pair of stacked layers opposes the spontaneous and/or piezoelectric polarization attributable to the arrangement of the atoms of the materials in the second of pair of stacked layers;
• the pair of stacked layers being positioned so as to provide electrical energy.

A method of making an electronic device comprising the following steps, not necessarily in the following order:

• providing a substrate;
• providing first and second stacks of polar semiconductor materials selected from the group of compounds consisting of GaN, InN, AlN, AlxGa(1-x)N, InxGa(1-x)N, AlxIn(1-x)N, AlxInyGa(1-x-y)N, where the values of x and y are greater than zero and less than one and wherein the sum of x and y is less than one, which create a polarization charge by one or more of spontaneous and piezoelectric polarization;
• the spontaneous and/or piezoelectric polarization charges being attributable to the atomic structure of the semiconductor materials, the first stack being Group III polar and the second stack being N-polar;
• the first stack being positioned relative to the second stack such that the total spontaneous and/or piezoelectric polarization charge of the first stack is in a direction opposite to the total spontaneous and/or piezoelectric polarization charge of the second stack.