Fin-based RF diodes
AssigneeGlobalfoundries Inc.
InventorJagar Singh
Life of this patent
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Abstract
Methods for forming a fin-based RF diode with improved performance characteristics and the resulting devices are disclosed. Embodiments include forming fins over a substrate, separated from each other, each fin having a lower portion and an upper portion; forming STI regions over the substrate, between the lower portions of adjacent fins; implanting the lower portion of each fin with a first-type dopant; implanting the upper portion of each fin, above the STI region, with the first-type dopant; forming a junction region around a depletion region and along exposed sidewalls and a top surface of the upper portion of each fin; and forming a contact on exposed sidewalls and a top surface of each junction region.
Claims18
A device comprising:
- fins over a substrate, separated from each other, each fin having a lower portion and an upper portion;
- shallow trench isolation (STI) regions over the substrate, between the lower portions of adjacent fins;
- the lower portion of each fin implanted with a first-type dopant;
- the upper portion of each fin, above the STI region, implanted with the first-type dopant;
- a junction region around a depletion region and along exposed sidewalls and a top surface of the upper portion of each fin;
- and
- a contact layer on a top surface of each junction region,
- wherein the lower portion of each fin is implanted with the first-type dopant to a higher concentration level than the upper portion of each fin.
A device comprising:
- fins over a substrate, separated from each other, each fin having a lower portion and an upper portion;
- shallow trench isolation (STI) regions over the substrate, between the lower portions of adjacent fins;
- the lower portion of each fin implanted with a first-type dopant;
- the upper portion of each fin, above the STI region, implanted with the first-type dopant;
- a depletion region in the upper portion of each fin;
- a junction region around the depletion region and along exposed sidewalls and a top surface of the upper portion of each fin;
- an active depletion region between the depletion region and the lower portion of each fin;
- and
- a titanium silicide (TiSi) layer on exposed sidewalls and top surface of the junction region,
- wherein the lower portion of each fin is implanted with the first-type dopant to a higher concentration level than the upper portion of each fin.
A device comprising:
- fins over a substrate, separated from each other, each fin having a lower portion and an upper portion, and wherein the upper portion of each fin has a top surface narrower than a bottom surface;
- shallow trench isolation (STI) regions over the substrate, between the lower portions of adjacent fins;
- the lower portion of each fin implanted with boron (B) at a concentration of 1e14 to 1e16 cm−3;
- the upper portion of each fin, above the STI region, implanted with B at a concentration of 1e12 to 1e14 cm−3;
- a junction region around a depletion region and along exposed sidewalls and a top surface of the upper portion of each fin;
- and
- a titanium silicide (TiSi) layer on exposed sidewalls and top surface of the junction region.
Dependencies are inferred from the claim text.