Schottky barrier structure for silicon carbide (SiC) power devices

Abstract

A method for fabricating a silicon carbide power device may include steps of: forming a first n-type silicon carbide layer on top of a second n-type silicon carbide layer; depositing a first metal layer on the first silicon carbide layer; patterning the first metal layer; depositing and patterning a dielectric layer onto at least a portion of the pattered first metal layer; and depositing and patterning a second metal layer to form a Schottky barrier. In one embodiment, the first metal layer is a high work function metal layer, which may include Silver, Aluminum, Chromium, Nickel and Gold. In another embodiment, the second metal layer is called a “Schottky metal” layer, which may include Platinum, Titanium and Nickel Silicide.

Dependencies are inferred from the claim text.