Semiconductor device with stripe-shaped trench gate structures and gate connector structure
AssigneeInfineon Technologies AG
InventorsThomas Aichinger, Wolfgang Bergner
Life of this patent
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Abstract
A semiconductor device includes a transistor cell with a stripe-shaped trench gate structure that extends from a first surface into a semiconductor body. A gate connector structure at a distance to the first surface is electrically connected to a gate electrode in the trench gate structure. A gate dielectric separates the gate electrode from the semiconductor body. First sections of the gate dielectric outside a vertical projection of the gate connector structure are thinner than second sections within the vertical projection of the gate connector structure.
Claims19
A semiconductor device, comprising:
- a transistor cell that comprises a trench gate structure extending from a first surface into a semiconductor body;
- a gate connector structure at a distance to the first surface and at a distance to end sections of the trench gate structure, and electrically connected to a gate electrode in the trench gate structure;
- a gate dielectric separating the gate electrode from the semiconductor body, wherein an active section of the gate dielectric is thinner than sections elsewhere within the trench gate structure;
- and
- wherein the active section comprises a first portion of a first sublayer and the sections of the gate dielectric elsewhere comprise a second sublayer, which is absent in the active section, and a second portion of the first sublayer.
A semiconductor device, comprising:
- a transistor cell that comprises a trench gate structure extending from a first surface into a semiconductor body, wherein the transistor cell includes an active section through which a load current flows in a vertical direction perpendicular to the first surface when the transistor cell is in an on-state and an idle section through which no load current flows in the vertical direction when the transistor cell is in the on-state;
- wherein
- a second section of a gate dielectric in the idle section includes at least one sublayer more than a first section of the gate dielectric in the active section.
A semiconductor device, comprising:
- a transistor cell that comprises a trench gate structure extending from a first surface into a semiconductor body, wherein the transistor cell includes an active section through which a load current flows in a vertical direction perpendicular to the first surface when the transistor cell is in an on-state and an idle section through which no load current flows in the vertical direction when the transistor cell is in the on-state;
- wherein
- a second section of a gate dielectric in the idle section is thicker than a first section of the gate dielectric, in the active section and separates a gate electrode in the trench structures from body zones.
Dependencies are inferred from the claim text.