Low resistance contact structures for trench structures
AssigneeInternational Business Machines Corporation
InventorsPraneet Adusumilli, Alexander Reznicek, Oscar van der Straten, Chih-Chao Yang
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Abstract
An electrical device including at least one contact surface and an interlevel dielectric layer present atop the electrical device, wherein the interlevel dielectric layer includes at least one trench to the at least one contact surface of the electrical device. A conformal titanium liner is present on the sidewalls of the trench and is in direct contact with the at least one contact surface. The conformal titanium liner may be composed of 100 wt. % titanium, and may have a thickness ranging from 10 Å to 100 Å.
Claims8
A method of forming a contact to an electrical device comprising:
- forming a substantially nitrogen free titanium liner having in direct contact with sidewalls of a trench composed of an interlayer dielectric, and a base surface of the trench provided by a contact surface of the electrical device comprising silicon (Si);
- filling an entirety of the trench with a single composition metal fill comprising ruthenium (Ru) containing material, the single composition metal fill being in direct contact with the substantially nitrogen free titanium liner;
- and
- after filling the entirety of the trench, alloying the substantially nitrogen free conformal titanium layer with the contact surface to provide a titanium containing silicide, the nitrogen free conformal titanium layer providing both a deposition surface for the metal fill and a silicide forming element.
Dependencies are inferred from the claim text.