Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET

A termination structure with multiple embedded potential spreading capacitive structures (TSMEC) for terminating an active area semiconductor device being located along the top surface of a bulk semiconductor layer (BSL) of a first conductivity type having a proximal bulk semiconductor wall (PBSW) separating the TSMEC from the active area semiconductor device, the TSMEC comprises an oxide-filled large deep trench (OFLDT) being bounded by the PBSW and a distal bulk semiconductor wall (DBSW),

• wherein the OFLDT further comprises:
• an oxide trench of trench size (TCS) and trench depth (TCD) into the BSL;
• and
• a plurality of embedded capacitive structures (EBCS) each formed of a conductive embedded polycrystalline semiconductor region (EPSR) surrounded by an oxide located inside the oxide trench, the plurality of EBCS sequentially placed between the PBSW and the DBSW and completely filling an entire space between the PBSW and the DBSW;
• wherein a proximal EPSR located next to the PBSW is electrically connected to a top electrode and is electrically connected to a doped region of a second conductivity type opposite the first conductivity type disposed on a top portion of the PBSW;
• and
• wherein the DBSW further comprises:
• a doped region of the second conductivity type disposed on a top portion of the DBSW.