Method of forming body contact layouts for semiconductor structures
AssigneeIntersil Americas Inc.
InventorsDev Alok Girdhar, Jeffrey Michael Johnston
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Abstract
Methods for forming body contact layouts for semiconductor structures are disclosed. In at least one exemplary embodiment, a method comprises: forming a plurality of gates disposed on a semiconductor layer, each gate extending parallel to a y-axis in a coordinate space; a source region disposed between two of the plurality of gates; a plurality of body contacts disposed in each source region; and wherein a portion of each body contact, adjacent to the gate, has a width extending parallel to the y-axis that is less than the width of the body contact parallel to the y-axis at a distance on an x-axis from the gate.
Claims13
A method for forming body contacts, the method comprising:
- patterning a source region and a drain region of a semiconductor structure on a semiconductor substrate;
- implanting the source region and the drain region with one or both of a P-type dopant and an N-type dopant;
- and
- patterning a body contact on the semiconductor substrate, wherein the pattern of the body contact has a width extending parallel to a y-axis in a coordinate space that decreases as the pattern of the body contact approaches a gate of the semiconductor structure from approximately the center of the pattern of the body contact.
A method of forming a semiconductor structure, comprising:
- forming first and second gates disposed on a semiconductor layer, each gate extending parallel to a y-axis in a coordinate space;
- forming a source region disposed between the first and second gates;
- and
- forming a body contact disposed in the source region, wherein a portion of the body contact, adjacent to the gate, has a width extending parallel to the y-axis that is less than the width of the body contact parallel to the y-axis at a distance on an x-axis from the gate.
Dependencies are inferred from the claim text.