Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistor

A method of forming a semiconductor structure comprising:

• forming at least one nanowire segment wrapped around by a gate structure located on a substrate, the at least one nanowire segment having a first end and a second end opposite the first end;
• forming a first epitaxial semiconductor region extending from the first end of the at least one nanowire segment, the first epitaxial semiconductor region comprising a first semiconductor material and dopants of a first conductivity type;
• and
• forming a second epitaxial semiconductor region extending from the second end of the at least one nanowire segment, the second epitaxial semiconductor region comprising a second semiconductor material different from the first semiconductor material and dopants of a second conductivity type opposite the first conductivity type.