Standard cell architecture for parasitic resistance reduction

A method of operation of a metal oxide semiconductor (MOS) integrated circuit (IC) including a first standard cell and a second standard cell adjacent the first standard cell, the method comprising:

• flowing a first current through a first MOS transistor in the first standard cell, the first MOS transistor having a first MOS transistor source;
• flowing a second current through a first contact interconnect extending in a first direction and contacting the first MOS transistor source, the first contact interconnect being within the first standard cell, the first contact interconnect being coupled to a voltage source;
• flowing a third current through a second contact interconnect extending in the first direction along a first boundary and over a portion of a first double diffusion break that extends along the first boundary in the first direction of the first standard cell and the second standard cell, the first double diffusion break being within both the first standard cell and the second standard cell, the second contact interconnect being within both the first standard cell and the second standard cell, the second contact interconnect being coupled to the voltage source;
• and
• flowing a fourth current through a third contact interconnect extending in a second direction orthogonal to the first direction and contacting the first contact interconnect and the second contact interconnect to couple the first contact interconnect and the second contact interconnect together.

A metal oxide semiconductor (MOS) integrated circuit (IC) including a first standard cell and a second standard cell adjacent the first standard cell, the MOS IC comprising:

• first means for flowing a current in a first direction, the first means contacting a first MOS transistor source of a first MOS transistor in the first standard cell, the first means being within the first standard cell, the first means being coupled to a voltage source;
• second means for flowing the current in the first direction along a first boundary and over a portion of a first double diffusion break that extends along the first boundary in the first direction of the first standard cell and the second standard cell, the first double diffusion break being within both the first standard cell and the second standard cell, the second means being within both the first standard cell and the second standard cell, the second means being coupled to the voltage source;
• and
• third means for flowing the current in a second direction orthogonal to the first direction and contacting the first means and the second means to couple the first means and the second means together.