Semiconductor device including a LDMOS transistor
AssigneeInfineon Technologies AG
InventorsAlbert Birner, Helmut Brech, Matthias Zigldrum, Michaela Braun, Christian Eckl
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Abstract
In an embodiment, a semiconductor device includes a semiconductor substrate having a bulk resistivity ρ≥100 Ohm.cm, a front surface and a rear surface, at least one LDMOS transistor in the semiconductor substrate, and a RESURF structure. The RESURF structure includes a doped buried layer arranged in the semiconductor substrate, spaced at a distance from the front surface and the rear surface, and coupled with at least one of a channel region and a body contact region of the LDMOS transistor.
Claims25
A semiconductor device, comprising:
- a semiconductor substrate having a bulk resistivity ρ≥100 Ohm.cm, a front surface and a rear surface;
- at least one LDMOS (Lateral Diffused Metal Oxide Semiconductor) transistor in the semiconductor substrate;
- and
- a RESURF structure comprising a doped buried layer arranged in the semiconductor substrate, spaced at a distance from the front surface and the rear surface, and coupled with a body contact region of the LDMOS transistor,
- wherein the doped buried layer is self-depleting and source grounded, the dope buried layer spaced from a channel region by a portion of the semiconductor substrate,
- wherein the substrate, the channel layer and the doped buried layer are doped with a first conductivity type and the dopant concentration of the buried layer is greater than a dopant concentration of the substrate and less than a dopant concentration of the channel region.
A method, comprising:
- implanting a self-depleting layer with a dopant concentration of a first conductivity type within a semiconductor substrate comprising a bulk resistivity ρ≥100 Ohm.cm;
- and
- forming an LDMOS transistor in a front surface of the substrate, such that a source region, a channel region, a drift region and a drain region are spaced apart from the self-depleting layer by a portion of the substrate, wherein the body contact region extends to, and is coupled with, the self-depleting layer, wherein the portion of the substrate is positioned in a vertical direction between the self-depleting layer and the source, channel and drain regions.
A semiconductor device, comprising:
- a semiconductor substrate having a bulk resistivity ρ≥100 Ohm.cm, a front surface and a rear surface;
- at least one LDMOS transistor in the semiconductor substrate, the LDMOS transistor comprising a source region, a drain region, a channel region, a drift region and a body contact region, wherein the source region is coupled to a conductive layer on the rear surface of the substrate;
- a doped buried layer arranged in the substrate, spaced at a distance from the front surface and the rear surface, and coupled with the body contact region of the LDMOS transistor;
- a gate shield extending from a gate towards the source region of the LDMOS transistor;
- and
- a field plate extending from the gate towards the drain region of the LDMOS transistor,
- wherein the doped buried layer is self-depleting and source grounded, the doped buried layer spaced from the channel region by a portion of the semiconductor substrate,
- wherein the substrate, the channel layer and the doped buried layer are doped with a first conductivity type and the dopant concentration of the buried layer is greater than a dopant concentration of the substrate and less than a dopant concentration of the channel region.
Dependencies are inferred from the claim text.