Wide gap semiconductor device and method of manufacturing the same

A manufacturing method of a wide gap semiconductor device comprising:

• providing a second conductive-type region on a first conductive-type semiconductor layer;
• providing a first electrode in such a way that a part of the first electrode is disposed on the second conductive-type region and the other part is disposed on the first conductive-type semiconductor layer;
• providing a second electrode, which forms a schottky junction with the first conductive-type semiconductor layer, between the first electrode and the end part of the wide gap semiconductor device;
• and
• providing an insulating layer that is adjacent to the first electrode on the first conductive-type semiconductor layer and that extends to an end part of the wide gap semiconductor device,
• wherein a distance between an end part of the second conductive-type region and an end part of a contact surface between the second electrode and the first conductive-type semiconductor layer is larger than a theoretical width of a depletion layer, and
• wherein the theoretical width of the depletion layer is calculated based on a following formula (1)
• 2
• ⁢
• ɛ
• s
• ⁢
• V
• bi
• q
• ⁢
• ⁢
• N
• d
• (
• formula
• ⁢
• ⁢
• 1
• )
• in the formula (1), ∈s shows a dielectric constant of the first conductive-type semiconductor layer, Vbi shows a built-in potential, and Nd shows a donor concentration in the first conductive-type semiconductor layer.