Removal of electrostatic charges from interposer for die attachment

A wafer, comprising:

• a first interposer comprising a first patterned metal layer;
• a second interposer comprising a second patterned metal layer;
• and
• a metal connection in a scribe region of the wafer that electrically couples the first patterned metal layer of the first interposer with the second patterned metal layer of the second interposer forming a global wafer network;
• and
• a probe pad located in the scribe region electrically coupled to the global wafer network;
• wherein each of the first interposer and the second interposer comprise a plurality of conductive networks and an array of microbumps, the first patterned metal layer is one of a supply voltage network or a ground network of the plurality of conductive networks of the first interposer, and the second patterned metal layer is one of a supply voltage network or a ground network of the plurality of conductive networks of the second interposer, the supply voltage network or the ground network of the first interposer and the second interposer being electrically coupled to a plurality of microbumps in the respective array of microbumps, the probe pad configured to remove electrostatic charges from the first interposer and the second interposer through grounding.