Back to results
US 9,960,226 B2Granted
High density capacitor structure and method
AssigneeGlobalfoundries Inc.
InventorsWai-Kin Li, Chengwen Pei, Ping-Chuan Wang
Life of this patent
Estimating the term…
Abstract
High density capacitor structures based on an array of semiconductor nanorods are provided. The high density capacitor structure can be a plurality of capacitors in which each of the semiconductor nanorods serves as a bottom electrode for one of the plurality of capacitors, or a large-area metal-insulator-metal (MIM) capacitor in which the semiconductor nanorods serve as a support structure for a bottom electrode of the MIM capacitor subsequently formed.
Claims19
A semiconductor device comprising a capacitor, the capacitor comprising:
- a plurality of semiconductor nanorods present on and oriented perpendicular to a top surface of a semiconductor substrate, wherein a top surface of each of the plurality of semiconductor nanorods has a catalyst dot present thereon;
- a conformal first conductive material layer present on exposed surfaces of the semiconductor substrate, the plurality of semiconductor nanorods, and each catalyst dot;
- a conformal dielectric material layer present on the conformal first conductive material layer;
- and
- a second conductive material layer present on the dielectric material layer, the second conductive material layer filling the spaces between the plurality of semiconductor nanorods.
2 more elements
Dependencies are inferred from the claim text.