Manufacturing method of power storage device

A method for manufacturing a power storage device comprising the steps of:

• processing a current collector with a material selected from the group consisting of a hydrofluoric acid, NF3 plasma, SiF4 plasma, and ClF3 plasma;
• and
• forming a crystalline semiconductor layer including a whisker over the current collector,
• wherein the crystalline semiconductor layer comprises silicon,
• wherein a diameter of the whisker is greater than or equal to 500 nm and less than or equal to 3 μm,
• wherein a length along an axis of the whisker is greater than or equal to 500 nm and less than or equal to 1000 μm, and
• wherein the current collector comprises a metal element which forms silicide by reacting with silicon on a surface region of the current collector.

A method for manufacturing a power storage device comprising the steps of:

• processing a current collector with a material selected from the group consisting of a hydrofluoric acid, NF3 plasma, SiF4 plasma, and ClF3 plasma;
• and
• forming a crystalline semiconductor layer including a whisker over the current collector with a source gas containing silicon by a low-pressure chemical vapor deposition method,
• wherein the crystalline semiconductor layer comprises silicon,
• wherein a diameter of the whisker is greater than or equal to 500 nm and less than or equal to 3 μm,
• wherein a length along an axis of the whisker is greater than or equal to 500 nm and less than or equal to 1000 μm, and
• wherein the current collector comprises a metal element which forms silicide by reacting with silicon on a surface region of the current collector.