Base and manufacturing method thereof, display device
AssigneeBoe Technology Group Co., Ltd.
InventorsXiangyong Kong, Fengjuan Liu
Life of this patent
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Abstract
A base and a manufacturing method thereof and a display device are provided, so that a problem of faultage of an insulating layer when forming the insulating layer on an aluminum electrode of a substrate is solved. The base includes an aluminum electrode in a first setting pattern on a substrate, and an aluminum oxide layer or an aluminum nitride layer (3) in a second setting pattern provided in a same layer with the aluminum electrode. The first setting pattern and the second setting pattern are complementary to each other.
Claims16
A base, comprising:
- an aluminum electrode in a first setting pattern located on a substrate;
- and
- an aluminum oxide layer or an aluminum nitride layer in a second setting pattern provided in a same layer with the aluminum electrode,
- wherein the first setting pattern and the second setting pattern are complementary to each other, the aluminum electrode has a height different from that of the aluminum oxide layer or the aluminum nitride layer, and the height difference between the aluminum electrode and the aluminum oxide layer, or between the aluminum electrode and the aluminum nitride layer, is greater than 0 nm and less than or equal to 700 nm.
A method of manufacturing a base, comprising:
- forming an aluminum electrode in a first setting pattern on a substrate;
- and
- forming an aluminum oxide layer or an aluminum nitride layer in a second setting pattern provided in a same layer with the aluminum electrode on the substrate,
- wherein the first setting pattern and the second setting pattern are complementary to each other, and the forming of the aluminum electrode and the aluminum oxide layer or the aluminum nitride layer comprises:
- forming an aluminum layer of a first setting thickness on the substrate;
- forming a protective layer on a region where the aluminum electrode is to be formed on the aluminum layer, and exposing regions of the aluminum layer other than the region with the protective layer;
- and
- annealing the substrate with the protective layer in an oxygen or nitrogen annealing equipment,
- wherein the exposed regions of the aluminum layer form the aluminum oxide layer or the aluminum nitride layer, and the region of the aluminum layer under the protective layer forms the aluminum electrode.
A method of manufacturing a base, comprising:
- forming an aluminum electrode in a first setting pattern on a substrate;
- and
- forming an aluminum oxide layer or an aluminum nitride layer in a second setting pattern provided in a same layer with the aluminum electrode on the substrate,
- wherein the first setting pattern and the second setting pattern are complementary to each other,
- wherein the forming of the aluminum electrode and the aluminum oxide layer or the aluminum nitride layer comprises:
- forming an aluminum layer of a first setting thickness on the substrate;
- forming a protective layer on a region where an aluminum electrode is to be formed on the aluminum layer;
- exposing regions of the aluminum layer other than the region with the protective layer;
- and
- etching the exposed regions of the aluminum layer so that a region of the aluminum layer in a first setting thickness is etched into a region of the aluminum layer in a second setting thickness.
Dependencies are inferred from the claim text.