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US 9,960,183 B2Granted
Method of manufacturing semiconductor device
AssigneeRenesas Electronics Corporation
InventorHideki Makiyama
Life of this patent
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Abstract
A method of manufacturing a semiconductor device including: preparing a substrate in which an insulating layer, a semiconductor layer, and an insulating film are laminated on a semiconductor substrate, and a device isolation region is embedded in a trench. The insulating film in a bulk region is removed; the semiconductor layer in the bulk region is removed; and thereafter the insulating film in the SOI region and the insulating layer in the bulk region are thinned. An impurity is implanted into the semiconductor substrate in the SOI region, and thereafter the insulating film in the SOI region and the insulating layer in the bulk region are removed.
Claims17
A method of manufacturing a semiconductor device, the method comprising:
- (a) preparing a substrate including a semiconductor substrate, an insulating layer on the semiconductor substrate, a semiconductor layer on the insulating layer, a first insulating film on the semiconductor layer, a trench penetrating to the semiconductor substrate through the first insulating film, the semiconductor layer and the insulating layer, and a device isolation region embedded in the trench;
- (b) after the step (a), removing the first insulating film in a first region of the substrate by etching, exposing the semiconductor layer in the first region, and leaving the first insulating film in a second region different from the first region of the substrate;
- (c) after the step (b), removing the semiconductor layer in the first region by etching, and exposing the insulating layer in the first region;
- (d) after the step (c), etching the insulating layer in the first region and the first insulating film in the second region, and thinning a thickness of the insulating layer in the first region and a thickness of the first insulating film in the second region;
- (e) after the step (d), implanting an impurity into the semiconductor substrate in the second region, and forming a first semiconductor region;
- (f) after the step (e), removing the insulating layer in the first region and the first insulating film in the second region by etching, and exposing the semiconductor substrate in the first region and the semiconductor layer in the second region;
- and
- (g) after the step (f), forming a first transistor on the semiconductor substrate in the first region, and forming a second transistor on the semiconductor layer in the second region,
- wherein the insulating layer, the first insulating film and the device isolation region are made of the same material as one another,
- wherein, in the step (c), the semiconductor layer in the first region is removed by wet etching using a first etching liquid,
- wherein, in the step (d), the insulating layer in the first region and the first insulating film in the second region are removed by wet etching using a second etching liquid different from the first etching liquid,
- wherein an etching speed of each of the first insulating film and the insulating layer by using the first etching liquid is smaller than an etching speed of the semiconductor layer by using the first etching liquid, and
- wherein an etching speed of each of the first insulating film and the insulating layer by using the second etching liquid is higher than the etching speed of each of the first insulating film and the insulating layer by using the first etching liquid.
10 more elements
A method of manufacturing a semiconductor device, the method comprising:
- (a) preparing a substrate including a semiconductor substrate, an insulating layer on the semiconductor substrate, a semiconductor layer on the insulating layer, a first insulating film on the semiconductor layer, a trench penetrating to the semiconductor substrate through the first insulating film, the semiconductor layer and the insulating layer and a device isolation region embedded in the trench, wherein the insulating layer, the first insulating film and the device isolation region are made of silicon oxide as one another;
- (b) after the step (a), removing the first insulating film in a first region of the substrate by etching, exposing the semiconductor layer in the first region, and leaving the first insulating film in a second region different from the first region of the substrate;
- (c) after the step (b), removing the semiconductor layer in the first region by wet etching using an APM liquid, and exposing the insulating layer in the first region;
- (d) after the step (c), etching the insulating layer in the first region and the first insulating film in the second region by wet etching using hydrofluoric acid, and thinning a thickness of the insulating layer in the first region and a thickness of the first insulating film in the second region;
- (e) after the step (d), implanting an impurity into the semiconductor substrate in the second region, and forming a first semiconductor region;
- (f) after the step (e), using hydrofluoric acid, removing the insulating layer in the first region and the first insulating film in the second region by wet etching, and exposing the semiconductor substrate in the first region and the semiconductor layer in the second region;
- and
- (g) after the step (f), forming a first transistor over the semiconductor substrate in the first region, and forming a second transistor over the semiconductor layer in the second region.
5 more elements
Dependencies are inferred from the claim text.