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US 9,960,175 B2Granted
Field effect transistor memory device
AssigneeThe Regents of the University of Michigan
InventorsXiaogan Liang, Hongsuk Nam, Sungjin Wi, Mikai Chen
Life of this patent
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Abstract
A method for generating a non-volatile memory device may comprise: applying plasma for a preset time period to an exposed surface of a channel of a field effect transistor such that a plurality of charge-trapping sites are formed at the channel. The channel is comprised of a multi-layer structure of atomically thin two-dimensional sheets.
Claims16
A method for generating a non-volatile memory device, the method comprising:
- applying a plasma for a preset time period to an exposed surface of a channel of a field effect transistor such that a plurality of charge-trapping sites are formed at the channel, wherein the channel is comprised of a multi-layer structure of two-dimensional material;
- wherein the charge-trapping sites are formed between a first layer and a second layer of the channel, the first layer is treated with the plasma and is above the second layer of the channel, the second layer of the channel is not treated by the plasma, the first layer includes one or more sheets and the second layer includes one or more sheets different from the first layer.
A memory device comprising:
- a field effect transistor including a source, a drain, a gate, and a channel portion located between the source and the drain, wherein:
- the channel portion is comprised of a multi-layer structure of two-dimensional material, wherein the channel portion includes a first layer having multiple ripples and a second layer, such that multiple charge gaps are defined between the first layer and the second layer,
- wherein the first layer is a plasma-doped layer and the second layer is an un-doped layer.
A memory device comprising:
- a field effect transistor including a source, a drain, a gate, and a channel portion located between the source and the drain,
- wherein the channel portion is comprised of a multi-layer structure of two-dimensional material, wherein the channel portion includes a first layer having multiple ripples and a second layer, such that multiple charge gaps are defined between the first layer and the second layer,
- wherein the field effect transistor stores n-bits and includes 2n distinguishable data levels, and n is an integer.
Dependencies are inferred from the claim text.