Semiconductor device and method for manufacturing the same
AssigneeToshiba Memory Corporation
InventorsTakuo Ohashi, Masaaki Higuchi
Life of this patent
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Abstract
According to one embodiment, a semiconductor device includes a semiconductor layer; an electrode layer; a first insulating film; a charge storage film; and a second insulating film. The first insulating film is provided between the electrode layer and the semiconductor layer. The charge storage film is provided between the first insulating film and the electrode layer. The charge storage film includes a charge trapping layer and a floating electrode layer. The floating electrode layer includes doped silicon. The second insulating film is provided between the floating electrode layer and the electrode layer.
Claims12
A semiconductor device, comprising:
- a semiconductor layer;
- an electrode layer;
- a first insulating film provided between the electrode layer and the semiconductor layer;
- a charge storage film provided between the first insulating film and the electrode layer, the charge storage film including a charge trapping layer and a floating electrode layer, the floating electrode layer including doped silicon;
- and
- a second insulating film provided between the floating electrode layer and the electrode layer,
- wherein the doped silicon includes boron, and
- wherein the charge trapping layer includes boron.
A semiconductor device, comprising:
- a semiconductor layer;
- a stacked body including a plurality of electrode layers, the electrode layers stacked on one another;
- a first insulating film provided between the electrode layers and the semiconductor layer;
- a charge storage film provided between the first insulating film and the electrode layers, the charge storage film including a charge trapping layer and a floating electrode layer, the floating electrode layer including doped silicon;
- and
- a second insulating film provided between the floating electrode layer and the electrode layers, wherein
- the charge trapping layer is a film provided continuously on the electrode layers in a stacking direction of the stacked body, and
- the floating electrode layer is a film divided in the stacking direction of the stacked body and provided corresponding to the respective electrode layers.
A semiconductor device, comprising:
- a semiconductor layer;
- a first electrode layer provided on the semiconductor layer;
- a second electrode layer provided on the semiconductor layer, the second electrode layer separated from the first electrode layer;
- a first insulating film provided between the first electrode layer and the semiconductor layer, and between the second electrode layer and the semiconductor layer;
- a charge storage film provided between the first insulating film and the first electrode layer, and between the first insulating film and the second electrode layer, the charge storage film including a charge trapping layer, a first floating electrode layer, and a second floating electrode layer, the charge trapping layer provided between the first insulating film and the first electrode layer, and between the first insulating film and the second electrode layer, the first floating electrode layer provided between the charge trapping layer and the first electrode layer, the second floating electrode layer provided between the charge trapping layer and the second electrode layer, the first floating electrode layer including first doped silicon, and the second floating electrode layer including second doped silicon;
- a second insulating film provided between the first floating electrode layer and the first electrode layer;
- a third insulating film provided between the second floating electrode layer and the second electrode layer;
- and
- a fourth insulating film provided between the first floating electrode layer and the second floating electrode layer, and between the first electrode layer and the second electrode layer.
Dependencies are inferred from the claim text.