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US 9,960,173 B2Granted
Semiconductor memory device
AssigneeToshiba Memory Corporation
InventorYoshiro Shimojo
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a semiconductor memory device includes: a substrate; a first interconnect; a second interconnect; a plurality of third interconnects; a fourth interconnect; a semiconductor member; a charge storage member; and a conductive member. One of the plurality of third interconnects is disposed on two second-direction sides of the conductive member. Portions of the one of the plurality of third interconnects disposed on the two second-direction sides of the conductive member are formed as one body.
Claims16
A semiconductor memory device, comprising:
- a substrate having a surface;
- a first interconnect facing the surface of the substrate in a first direction;
- a second interconnect, the first interconnect being provided between the second interconnect and the substrate in the first direction;
- a plurality of third interconnects extending in a second direction, being arranged to be separated from each other along the first direction, the second interconnect being provided between the third interconnects and the first interconnect in the first direction, the second direction crossing the first direction;
- a fourth interconnect extending in a third direction crossing the first direction, the third interconnects being provided between the fourth interconnect and the second interconnect in the first direction;
- a first semiconductor member extending in the first direction and piercing the third interconnects, the first semiconductor member being connected between the fourth interconnect and the second interconnect;
- a first charge storage member provided between the first semiconductor member and at least one of the third interconnects;
- a fifth interconnect extending in the third direction, the third interconnects being provided between the fifth interconnect and the second interconnect in the first direction;
- a second semiconductor member extending in the first direction and piercing the third interconnects, the second semiconductor member being connected between the fifth interconnect and the second interconnect
- a second charge storage member provided between the second semiconductor member and at least one of the third interconnects;
- a sixth interconnect, the third interconnects being provided between the sixth interconnect and the second interconnect in the first direction;
- and
- a conductive member extending in the first direction and piercing the third interconnects and the second interconnect while being insulated therefrom, the conductive member being connected between the sixth interconnect and the first interconnect.
10 more elements
A semiconductor memory device, comprising:
- a substrate having a surface;
- a first interconnect facing the surface of the substrate in a first direction;
- a second interconnect facing the surface of the substrate in the first direction;
- a third interconnect, the first interconnect and the second interconnect being provided between the third interconnect and the substrate in the first direction;
- a plurality of fourth interconnects extending in a second direction, and being arranged to be separated from each other along the first direction, the third interconnect being provided between the fourth interconnects and the first interconnect in the first direction and between the fourth interconnects and the second interconnect in the first direction, the second direction crossing the first direction;
- a fifth interconnect extending in a third direction crossing the first direction, the fourth interconnects being provided between the fifth interconnect and the third interconnect in the first direction;
- a semiconductor member extending in the first direction and piercing the fourth interconnects, the semiconductor member being connected between the fifth interconnect and the third interconnect;
- a charge storage member provided between the semiconductor member and at least one of the fourth interconnects;
- a sixth interconnect, the fourth interconnects being provided between the sixth interconnect and the third interconnect in the first direction;
- a first conductive member extending in the first direction and piercing the fourth interconnects and the third interconnect while being insulated therefrom, the first conductive member being connected between the sixth interconnect and the first interconnect;
- a seventh interconnect, the fourth interconnects being provided between the seventh interconnect and the third interconnect in the first direction;
- a second conductive member extending in the first direction and piercing the fourth interconnects and the third interconnect while being insulated therefrom, the second conductive member being connected between the seventh interconnect and the second interconnect,
- the semiconductor member being provided between the first conductive member and the second conductive member in the second direction.
10 more elements
Dependencies are inferred from the claim text.