Method for forming semiconductor device

A method for forming a semiconductor device, comprising:

• providing a substrate comprising at least a memory region defined therein, and a plurality of memory cells being formed in the memory region;
• forming an insulating layer on the substrate;
• forming a plurality of openings in the insulating layer, and the openings respectively exposing a portion of the memory cells;
• sequentially forming a conductive portion and a metal layer in the openings;
• removing a portion of the metal layer to form a plurality of first metal portions and a plurality of second metal portions, each of the first metal portions and the conductive portion forming first connecting structures, and each of the second metal portions and the conductive portion forming second connecting structures;
• forming a passivation layer on the first connecting structures;
• and
• forming a plurality of first storage nodes and a plurality of dummy nodes on the substrate, the dummy nodes being electrically connected to the first connecting structures and the first storage nodes being electrically connected to the second connecting structures.