Semiconductor device having adjacent IGBT and diode regions with a shifted boundary plane between a collector region and a cathode region

A semiconductor device comprising a semiconductor substrate in which at least one IGBT region and at least one diode region are provided, wherein

• the IGBT region comprises:
• a first conductivity type emitter region disposed in an area exposed on a front surface of the semiconductor substrate;
• a second conductivity type base region surrounding the emitter region and in contact with the emitter region;
• a first conductivity type first drift region disposed on a back surface side of the semiconductor substrate with respect to the base region, and being separated from the emitter region by the base region;
• a gate electrode disposed in a trench penetrating the base region to extend to the first drift region, and facing a part of the base region which separates the emitter region from the first drift region;
• an insulating body disposed between the gate electrode and an inner wall of the trench;
• and
• a second conductivity type collector region disposed in an area exposed on a back surface of the semiconductor substrate,
• the diode region comprises:
• a second conductivity type anode region disposed in an area exposed on the front surface of the semiconductor substrate;
• a first conductivity type second drift region disposed on the back surface side of the semiconductor substrate with respect to the anode region;
• and
• a first conductivity type cathode region disposed in an area exposed on the back surface of the semiconductor substrate;
• the IGBT region and the diode region are adjacent to each other in a plan view of the semiconductor substrate,
• the emitter region does not exist in the diode region,
• in the plan view of the semiconductor substrate, an area of a structure on a front surface side of the IGBT region is larger than an area of a structure on a front surface side of the diode region, a first boundary plane where the collector region and the cathode region are adjacent is shifted from a second boundary plane where the IGBT region and the diode region are adjacent on the front surface side of the semiconductor substrate in a direction from the cathode region toward the collector region, and a third boundary plane at at an edge of the IGBT region opposite the second boundary plane on the front surface side of the semiconductor substrate in a direction from the fourth boundary plane toward the first boundary plane.