Low resistive electrode for an extendable high-k metal gate stack
AssigneeInternational Business Machines Corporation
InventorsRuqiang Bao, Keith Kwong Hon Wong
Life of this patent
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Abstract
In one embodiment, a method of making a semiconductor device includes: forming a substrate; forming an nFET transistor and a pFET transistor on the substrate; wherein forming the nFET transistor comprises first depositing several first layers in and along the inner sidewalls of a trench on the substrate, then depositing a conductive metal comprising cobalt on the several first layers; wherein forming the pFET transistor comprises first depositing several second layers in and along the inner sidewalls of a trench on the substrate, then depositing a conductive metal comprising cobalt on the several second layers.
Claims11
A method of making a semiconductor device, the method comprising:
- forming a substrate;
- forming a first gate stack of a first transistor on the substrate, wherein forming the first gate stack comprises:
- depositing a first high-k dielectric layer in and along the inner sidewalls of a first trench arranged on the substrate, depositing a nFET stack on the first high-k dielectric layer, the nFET stack comprising a first metal layer, a second metal layer, and a third metal layer, depositing a first barrier layer on the nFET stack, depositing a first n-type material layer directly on the first barrier layer, and depositing a first conductive metal consisting essentially of cobalt directly on the first n-type material layer and filling a remaining interior space of the first transistor with the first conductive metal, wherein the cobalt has a resistivity of 40 to 60 μohm-cm;
- and
- forming a second gate stack of a second transistor on the substrate adjacent to the first gate stack of the first transistor, wherein forming the second gate stack comprises:
- depositing a second high-k dielectric layer in and along the inner sidewalls of a second trench arranged on the substrate, depositing a second barrier layer on the second high-k dielectric layer, depositing a second n-type material layer directly on the second barrier layer, and depositing a second conductive metal consisting essentially of cobalt on the second n-type material layer and filling a remaining interior space of the second transistor with the second conductive metal, wherein the cobalt has a film thickness of 40 to 60 Angstroms and a resistivity of 40 to 60 μohm-cm.
A method of making a semiconductor device, the method comprising:
- forming a substrate;
- forming a first gate stack of a first transistor on the substrate, wherein forming the first gate stack comprises:
- depositing a first high-k dielectric layer in and along the inner sidewalls of a first trench arranged on the substrate, depositing an nFET stack on the first high-k dielectric layer, the nFET stack comprising a first metal layer, a second metal layer, and a third metal layer, depositing a first barrier layer on the nFET stack, depositing a first n-type material layer directly on the first barrier layer, and depositing a first conductive metal consisting essentially of cobalt on the first n-type material layer, and filling a remaining interior space of the first transistor with the first conductive metal;
- and
- forming a second gate stack of a second transistor on the substrate adjacent to the first gate stack of the first transistor, wherein forming the second gate stack comprises:
- depositing a second high-k dielectric layer in and along the inner sidewalls of a second trench arranged on the substrate, depositing a second barrier layer on the second high-k dielectric layer, depositing a second n-type material layer directly on the second barrier layer, and depositing a second conductive metal consisting essentially of cobalt on the second n-type material layer and filling a remaining interior space of the second transistor with the second conductive metal;
- wherein the first transistor is an nFET, the second transistor is a pFET, and wherein the nFET is subjected to patterning before the pFET, and
- wherein the cobalt has a film thickness of 40 to 60 Angstroms and a resistivity of 40 to 60 μohm-cm.
Dependencies are inferred from the claim text.