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US 9,960,159 B2Granted
Monolithic bi-directional current conducting device and method of making the same
AssigneeNorthrop Grumman Systems Corporation
InventorJohn V. Veliadis
Life of this patent
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Abstract
A monolithic bi-directional device provides bi-directional power flow and bi-directional blocking of high-voltages. The device includes a first transistor having a first drain formed over a first channel layer that overlays a substrate, and a second transistor that includes a second drain formed over a second channel layer that overlays the substrate. The substrate forms a common source for both the first transistor and the second transistor.
Claims10
A device comprising:
- a first transistor having a first drain formed over a first channel layer that overlays a substrate;
- a second transistor having a second drain formed over a second channel layer that overlays the substrate, wherein the first drain and the second drain are independent and not shared, wherein the substrate forms a common source for both the first transistor and the second transistor, and wherein the device is a monolithic device for providing bi-directional power flow between the first transistor and the second transistor and bi-directional blocking of high-voltages.
Dependencies are inferred from the claim text.