Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorHidenori Fujii
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a multilayer structure including an n− i layer, a p anode layer formed on the front surface of the n− i layer, an n− buffer layer formed on the back surface of the n− i layer, an n+ cathode layer and a p collector layer formed on the back surface of the n− buffer layer or on the back surfaces of the n− i layer and the n− buffer layer such that the n+ cathode layer and the p collector layer are adjacent to each other in a plan view or adjacent portions thereof overlap each other in a plan view, a front surface electrode, and a back surface electrode. A vertical position in the multilayer structure of the n+ cathode layer in the multilayer structure differs from that of the p collector layer.
Claims8
A semiconductor device comprising:
- a multilayer structure including:
- a first semiconductor layer of a first conductivity type;
- a second semiconductor layer of a second conductivity type formed on a front surface of said first semiconductor layer;
- a third semiconductor layer of said first conductivity type formed on a back surface of said first semiconductor layer;
- a fourth semiconductor layer of said first conductivity type and a fifth semiconductor layer of said second conductivity type that are formed on a back surface of said third semiconductor layer or on the back surface of each of said first semiconductor layer and said third semiconductor layer in such a manner that said fourth semiconductor layer and said fifth semiconductor layer are situated adjacent to each other in a plan view or adjacent portions of said fourth semiconductor layer and said fifth semiconductor layer overlap each other in a plan view;
- a first electrode formed to cover a front surface of said second semiconductor layer;
- and
- a second electrode formed to cover a back surface of each of said fourth semiconductor layer and said fifth semiconductor layer,
- wherein a vertical position of said fourth semiconductor layer in said multilayer structure and a vertical position of said fifth semiconductor layer in said multilayer structure differ from each other, and
- a thickness of said first semiconductor layer in said multilayer structure including said fourth semiconductor layer and a thickness of said first semiconductor layer in said multilayer structure including said fifth semiconductor layer differ from each other.
Dependencies are inferred from the claim text.