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US 9,960,157 B2Granted
Bidirectional normally-off III-V high electron mobility transistor (HEMT)devices and circuits
AssigneeInfineon Technologies Austria AG
InventorsGerhard Prechtl, Bernhard Zojer
Life of this patent
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Abstract
Circuits and devices for bidirectional normally-off switches are described. A circuit for a bidirectional normally-off switch includes a depletion mode transistor and an enhancement mode transistor. The depletion mode transistor includes a first source/drain node, a second source/drain node, a first gate, and a second gate. The enhancement mode transistor includes a third source/drain node and a fourth source/drain node, and a third gate. The third source/drain node is coupled to the first source/drain node.
Claims30
A semiconductor device comprising:
- a bidirectional III-V high electron mobility transistor (HEMT) comprising a first source/drain node, a second source/drain node, a first gate, and a second gate isolated from the first gate, wherein the first gate is coupled to a first control node and the second gate is coupled to a second control node;
- a first field effect transistor (FET) comprising a first silicon substrate, a third source/drain node and a fourth source/drain node, and a third gate, wherein the third source/drain node is coupled to the first source/drain node, wherein the fourth source/drain node is coupled to a input/output node different from the first control node and the second control node;
- and
- a second FET comprising a second silicon substrate, a fifth source/drain node and a sixth source/node, and a fourth gate, wherein the fifth source/drain node is coupled to the second source/drain node.
1 more element
A circuit comprising:
- a high electron mobility transistor comprising a first source/drain node, a second source/drain node, a first gate, and a second gate, wherein the high electron mobility transistor is a depletion mode transistor;
- a first enhancement mode transistor comprising a third source/drain node and a fourth source/drain node, and a third gate, wherein the third source/drain node is coupled to the first source/drain node;
- and
- a second enhancement mode transistor comprising a fifth source/drain node and a sixth source/drain node, and a fourth gate, wherein the fifth source/drain node is coupled to the second source/drain node, wherein the circuit is configured to operate in
- a first mode in which the high electron mobility transistor is in a high resistance state, the first enhancement mode transistor is in a low resistance state, the second enhancement mode transistor is in a high resistance state,
- a second mode in which the high electron mobility transistor is in a low resistance state of the high electron mobility transistor, the first enhancement mode transistor is in the low resistance state of the first enhancement mode transistor, the second enhancement mode transistor is in a low resistance state of the second enhancement mode transistor, and
- a third mode in which the high electron mobility transistor is in the high resistance state of the high electron mobility transistor, the first enhancement mode transistor is in the low resistance state of the first enhancement mode transistor, the second enhancement mode transistor is in the low resistance state of the second enhancement mode transistor.
4 more elements
A semiconductor device comprising:
- a bidirectional high electron mobility transistor comprising a first source/drain node, a second source/drain node, a first gate, and a second gate isolated from the first gate, wherein the high electron mobility transistor is a normally on transistor;
- a first normally-off transistor comprising a third source/drain node and a fourth source/drain node, a first body, and a third gate, wherein the third source/drain node is coupled to the first source/drain node, wherein the fourth source/drain node is directly connected to the first body;
- and
- a second normally-off transistor comprising a fifth source/drain node and a sixth source/drain node, a second body, and a fourth gate, wherein the fifth source/drain node is coupled to the second source/drain node, wherein the sixth source/drain node is directly connected to the second body.
1 more element
Dependencies are inferred from the claim text.