Semiconductor device and electronic apparatus of a cascode-coupled system
AssigneeRenesas Electronics Corporation
InventorsSatoru Akiyama, Hiroyoshi Kobayashi, Hisao Inomata, Sei Saitou
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Abstract
The manufacturing yield of a semiconductor device is improved. There is provided a semiconductor device of a cascode coupling system, which is equipped with a plurality of normally-on junction FETs using as a material, a substance larger in bandgap than silicon, and a normally-off MOSFET using silicon as a material. At this time, the semiconductor chip has a plurality of junction FET semiconductor chips (semiconductor chip CHP0 and semiconductor chip CHP1) formed with the junction FETs in a divided fashion, and a MOSFET semiconductor chip (semiconductor chip CHP2) formed with the MOSFET.
Claims20
A semiconductor device, comprising:
- a first semiconductor chip including a first substrate comprised of a semiconductor larger in bandgap than silicon, the first semiconductor chip being formed with a first junction FET (Field Effect Transistor) including a first gate electrode, a first source, and a first drain;
- a second semiconductor chip including a second substrate comprised of a semiconductor larger in bandgap than silicon, the second semiconductor chip being formed with a second junction FET including a second gate electrode, a second source, and a second drain;
- and
- a third semiconductor chip including a third substrate comprised of silicon, the third semiconductor chip being formed with a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) including a third gate electrode, a third source, and a third drain;
- the first source of the first junction FET and the third drain of the MOSFET being electrically coupled,
- the second source of the second junction FET and the third drain of the MOSFET being electrically coupled,
- the first gate electrode of the first junction FET and the third source of the MOSFET being electrically coupled, and
- the second gate electrode of the second junction FET and the third source of the MOSFET being electrically coupled.
An electronic apparatus, comprising:
- a semiconductor device which is electrically coupled to a load and drives the load;
- and
- a control unit which controls the semiconductor device,
- the semiconductor device including a first semiconductor chip including a first substrate comprised of a semiconductor larger in bandgap than silicon, the first semiconductor chip being formed with a first junction FET (Field Effect Transistor) including a first gate electrode, a first source, and a first drain;
- a second semiconductor chip including a second substrate comprised of a semiconductor larger in bandgap than silicon, the second semiconductor chip being formed with a second junction FET including a second gate electrode, a second source, and a second drain;
- and
- a third semiconductor chip including a third substrate comprised of silicon, the third semiconductor chip being formed with a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) including a third gate electrode, a third source, and a third drain,
- the first source of the first junction FET and the third drain of the MOSFET being electrically coupled,
- the second source of the second junction FET and the third drain of the MOSFET being electrically coupled,
- the first gate electrode of the first junction FET and the third source of the MOSFET being electrically coupled, and
- the second gate electrode of the second junction FET and the third source of the MOSFET being electrically coupled.
Dependencies are inferred from the claim text.