Optoelectronic device with light-emitting diodes comprising at least one zener diode

An optoelectronic device, comprising:

• a plurality of light-emitting diodes, each exhibiting a threshold forward Voltage and a reverse breakdown voltage in a material comprising a same semiconductor compound, said plurality being arranged such that:
• N light-emitting diodes of said plurality, where N ≥2, are connected in series and are configured to be forward-biased, and
• at least one light-emitting diode of said plurality is connected in parallel to the N light-emitting diodes and is configured to be reverse-biased and to form a Zener diode,
• wherein a sum of threshold voltages of each of the N light-emitting diodes is less than a value of a breakdown voltage of the formed Zener diode, and
• wherein the plurality of light-emitting diodes comprises a stack of semiconductive portions comprising a first portion doped according to a first type of conductivity, a second portion doped according to a second type of conductivity opposite to the first type, and a first intermediate portion doped according to the first type of conductivity, the first intermediate portion being disposed between said first and second portions and having a doping level such that the breakdown voltage is greater than the sum of the threshold voltages of each of the N light-emitting diodes.