Semiconductor device assembly with through-mold cooling channel formed in encapsulant

A semiconductor device assembly:

• a first semiconductor die having a base region and a peripheral region adjacent to the base region;
• at least one second semiconductor die at the base region;
• and
• a thermal transfer device attached to the first and second semiconductor dies, the thermal transfer device including an encapsulant at least partially surrounding the second semiconductor die, a via formed in the encapsulant that at least partially defines a cavity adjacent to the peripheral region of the first semiconductor die, and a working fluid at least partially filling the cavity,
• wherein the peripheral region of the first semiconductor die includes a thermally conductive feature, and wherein the thermally conductive feature is in direct contact with the working fluid.

A semiconductor device assembly, comprising:

• a plurality of semiconductor dies including a first die and a stack of second dies on the first die;
• an encapsulant at least partially encapsulating the plurality of semiconductor dies, wherein the encapsulant includes first and second sidewalls defining a cavity, wherein the encapsulant further includes an upper surface, and wherein the cavity extends past the stack of second dies between a peripheral region of the first die and the upper surface of the encapsulant;
• a thermal conductor at least partially filling the cavity, wherein the thermal conductor includes a solid fill material;
• and
• a heat dissipator attached to the upper surface.