Semiconductor structure and method for forming the same

A semiconductor structure, comprising:

• a first stacking interposer, comprising:
• a first interposer having a first surface and a second surface opposite thereto;
• a plurality of first conductive pillars penetrating through the first interposer from the first surface to the second surface;
• a plurality of first bumps disposed at a side of the first surface of the first interposer and electrically connected to the first conductive pillars, wherein the first surface has a clearance region where is free of the first bumps and the clearance region is level with the side of the first surface;
• and
• a first redistribution layer disposed on the second surface of the first interposer;
• a first chip having a first surface and a second surface opposite thereto, the second surface of the first chip being fastened to the clearance region of the first surface of the first interposer, wherein the second surface of the first chip is between the first surface of the first chip and the first surface of the first interposer;
• and
• a plurality of second bumps disposed on the first surface of the first chip.

A method of forming a semiconductor structure, the method comprising:

• forming a first stacking interposer, comprising steps of:
• providing a first interposer having a first surface and a second surface;
• forming a plurality of first conductive pillars penetrating through the first interposer from the first surface to the second surface;
• forming a first redistribution layer on the second surface of the first interposer;
• forming a plurality of first bumps at a side of the first surface of the first interposer and electrically connected to the first conductive pillars, wherein the first surface has a clearance region where is free of the first bumps and the clearance region is level with the side of the first surface;
• and
• forming a conductive pad extending on the first surface and bridging two adjacent ones of the first conductive pillars, wherein the conductive pad covers the two adjacent ones of the first conductive pillars and is interposed between the two adjacent ones of the first conductive pillars and one of the first bumps;
• providing a first chip comprising a plurality of second bumps;
• and
• bonding the second bumps of the first chip to the first redistribution layer on the second surface of the first interposer, wherein the first chip is aligned with the clearance region of the first surface of the first interposer in a direction perpendicular to the first surface of the first interposer.

A method of forming a semiconductor structure, the method comprising:

• forming a first stacking interposer, comprising steps of:
• providing a first interposer having a first surface and a second surface;
• forming a plurality of first conductive pillars penetrating through the first interposer from the first surface to the second surface;
• forming a first redistribution layer on the second surface of the first interposer;
• and
• forming a plurality of first bumps at a side of the first surface of the first interposer and electrically connected to the first conductive pillars, wherein the first surface has a clearance region where is free of the first bumps and the clearance region is level with the side of the first surface;
• providing a first chip comprising a first surface, a second surface opposite thereto, and a plurality of second bumps on the first surface of the first chip;
• and
• fastening the second surface of the first chip to the clearance region of the first surface of the first interposer, wherein the second surface of the first chip is between the first surface of the first chip and the first surface of the first interposer.