Hybrid bonding with air-gap structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSzu-Ying Chen, Dun-Nian Yaung
Life of this patent
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Abstract
A package component includes a surface dielectric layer having a first planar surface, and a metal pad in the surface dielectric layer. The metal pad includes a diffusion barrier layer that includes sidewall portions, and a metallic material encircled by the sidewall portions of the diffusion barrier layer. The metallic material has a second planar surface level with the first planar surface. An air gap extends from the second planar surface of the metallic material into the metallic material. An edge of the air gap is aligned to an edge of the metallic material.
Claims20
A method comprising:
- performing a first Chemical Mechanical Polish (CMP) on surface features of a first package component, wherein the surface features comprise a first metal pad encircled by a first surface dielectric layer, and the first CMP is performed using a first slurry;
- performing a second CMP on the surface features of the first package component using a second slurry different from the first slurry, wherein the second CMP is started when the first surface dielectric layer is exposed, wherein in the second CMP, a first trench is formed in a peripheral region of the first metal pad;
- and
- bonding the first package component to a second package component, wherein the first metal pad is bonded to a second metal pad of the second package component, and the first surface dielectric layer is bonded to a second surface dielectric layer of the second package component.
A method comprising:
- forming an opening in a dielectric layer;
- depositing a barrier layer, wherein the barrier layer extends into the opening;
- filling the opening with a metallic material, with the metallic material being over the barrier layer;
- performing a first Chemical Mechanical Polish (CMP) to remove excess portions of the metallic material and the barrier layer until the dielectric layer is revealed, wherein the first CMP is performed using a first slurry, and wherein remaining portions of the metallic material and the barrier layer in the opening form a first metal pad;
- and
- performing a second CMP on the first metal pad using a second slurry different from the first slurry to form trench in a peripheral region of the first metal pad, wherein at a starting time point of the second CMP, the dielectric layer is exposed.
A method comprising:
- performing a first Chemical Mechanical Polish (CMP) on a first metal pad of a first package component, wherein the first metal pad is encircled by a first surface dielectric layer, and substantially no recess is generated to extend from a top surface of the first metal pad into the first metal pad;
- performing a second CMP on the first metal pad of the first package component, wherein the second CMP is performed using a second CMP condition different from a first CMP condition for performing the first CMP, with a trench generated to extend into the first metal pad;
- and
- bonding the first package component to a second package component, wherein the first metal pad is bonded to a second metal pad of the second package component, and wherein the first surface dielectric layer is bonded to a second surface dielectric layer of the second package component.
Dependencies are inferred from the claim text.